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K4E160411C-FL600

Description
EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24
Categorystorage    storage   
File Size257KB,21 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K4E160411C-FL600 Overview

EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24

K4E160411C-FL600 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeTSOP2
package instructionTSOP2,
Contacts26
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
JESD-30 codeR-PDSO-G24
length17.14 mm
memory density16777216 bit
Memory IC TypeEDO DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals24
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX4
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Certification statusNot Qualified
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
width7.62 mm
K4E170411C, K4E160411C
K4E170412C, K4E160412C
CMOS DRAM
4M x 4Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of
memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K
Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of
this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh
operation is available in L-version.
This 4Mx4 EDO DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consump-
tion and high reliability. It may be used as main memory unit for high level computer, microcomputer and personal computer.
FEATURES
Part Identification
- K4E170411C-B(F) (5V, 4K Ref.)
- K4E160411C-B(F) (5V, 2K Ref.)
- K4E170412C-B(F) (3.3V, 4K Ref.)
- K4E160412C-B(F) (3.3V, 2K Ref.)
Active Power Dissipation
Unit : mW
Speed
4K
-50
-60
324
288
3.3V
2K
396
360
4K
495
440
5V
2K
605
550
• Extended Data Out Mode operation
(Fast Page Mode with Extended Data Out)
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic SOJ and TSOP(II) packages
• Single +5V±10% power supply (5V product)
• Single +3.3V±0.3V power supply (3.3V product)
FUNCTIONAL BLOCK DIAGRAM
Refresh Cycles
Part
NO.
K4E170411C
K4E170412C
K4E160411C
K4E160412C
V
CC
5V
3.3V
5V
3.3V
2K
32ms
Refresh Control
Refresh Counter
Memory Array
4,194,304 x4
Cells
Refresh Refresh period
cycle
Normal L-ver
4K
64ms
128ms
RAS
CAS
W
Control
Clocks
VBB Generator
Vcc
Vss
Data in
Refresh Timer
Row Decoder
Sense Amps & I/O
Buffer
DQ0
to
DQ3
Performance Range
Speed
-50
-60
t
RAC
50ns
60ns
t
CAC
15ns
17ns
t
RC
84ns
104ns
t
HPC
20ns
25ns
Remark
5V/3.3V
5V/3.3V
A0-A11
(A0 - A10)
*1
A0 - A9
(A0 - A10)
*1
Row Address Buffer
Col. Address Buffer
Column Decoder
Data out
Buffer
OE
Note)
*1
: 2K Refresh
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
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