Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
FDG328PD87Z Parametric
Parameter Name
Attribute value
Maker
Fairchild
Parts packaging code
SC-70
package instruction
SMALL OUTLINE, R-PDSO-G6
Contacts
6
Reach Compliance Code
compliant
ECCN code
EAR99
Configuration
SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage
20 V
Maximum drain current (ID)
1.5 A
Maximum drain-source on-resistance
0.145 Ω
FET technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 code
R-PDSO-G6
Number of components
1
Number of terminals
6
Operating mode
ENHANCEMENT MODE
Maximum operating temperature
150 °C
Package body material
PLASTIC/EPOXY
Package shape
RECTANGULAR
Package form
SMALL OUTLINE
Polarity/channel type
P-CHANNEL
Certification status
Not Qualified
surface mount
YES
Terminal form
GULL WING
Terminal location
DUAL
transistor applications
SWITCHING
Transistor component materials
SILICON
FDG328PD87Z Preview
FDG328P
October 2000
PRELIMINARY
FDG328P
P-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced in
a rugged gate version of Fairchild Semiconductor’s
advanced PowerTrench process. It has been optimized
for power management applications for a wide range of
gate drive voltages (2.5V – 12V).
Features
•
•
•
•
–1.5 A, –20 V. R
DS(ON)
= 0.145
Ω
@ V
GS
= –4.5 V
R
DS(ON)
= 0.210
Ω
@ V
GS
= –2.5 V
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
Compact industry standard SC70-6 surface mount
package
Applications
•
•
•
Load switch
Power management
DC/DC converter
1
6
2
5
3
4
SC70-6
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–20
±
12
(Note 1a)
Units
V
V
A
W
°C
–1.5
–6
0.75
0.48
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(
Note 1b)
260
°C/W
Package Marking and Ordering Information
Device Marking
.28
Device
FDG328P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
2000
Fairchild Semiconductor Corporation
FDG328P Rev C(W)
FDG328P
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
===∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
V
DS
= –16 V,
V
GS
= 12 V,
V
GS
= –12 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
Min
–20
Typ
Max Units
V
Off Characteristics
–9
–1
100
–100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
===∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
V
GS
= –4.5 V,
I
D
= –1.5 A
I
D
= –1.2 A
V
GS
= –2.5 V,
V
GS
= –4.5 V, I
D
= –1.5 A, T
J
=125°C
V
GS
= –4.5 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –1.5 A
–0.6
3
120
169
156
–3
5
–1.5
V
mV/°C
145
210
203
mΩ
I
D(on)
g
FS
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= –10 V, V
GS
= 0 V,
f = 1.0 MHz
337
88
51
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –10 V, I
D
= 1 A,
V
GS
= –4.5 V, R
GEN
= 6
Ω
9
12
10
5
18
22
20
10
6
ns
ns
ns
ns
nC
nC
nC
V
DS
= –10 V, I
D
= –1.5 A,
V
GS
= –4.5 V
3.7
0.7
1.3
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= –0.62 A
(Note 2)
–0.62
–0.7
–1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a.)
b.)
2
170°/W when mounted on a 1 in pad of 2 oz. copper.
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