TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/518
Devices
2N3766
2N3767
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ T
C
= +25
0
C
(1)
Operating & Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
op
,
T
stg
2N3766
60
80
6.0
2.0
4.0
25
2N3767
80
100
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0
-65 to +200
Max.
7.0
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
R
θ
JC
0
0
1) Derate linearly 143 mW/ C between T
C
= +25 C and T
C
= +200
0
C
Unit
0
C/W
TO-66*
(TO-213AA)
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc
V
CE
= 80 Vdc
Collector-Emitter Cutoff Current
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc
V
CE
= 100 Vdc, V
BE
= 1.5 Vdc
Collector-Base Cutoff Current
V
CB
= 80 Vdc
V
CB
= 100 Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
2N3766
2N3767
2N3766
2N3767
2N3766
2N3767
2N3766
2N3767
V
(BR)
CEO
60
80
500
500
10
10
10
10
500
Vdc
I
CEO
µAdc
I
CEX
µAdc
I
CBO
I
EBO
µAdc
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3766, 2N3767 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
I
C
= 50 mAdc, V
CE
= 5.0 Vdc
I
C
= 500 mAdc, V
CE
= 5.0 Vdc
I
C
= 1.0 Adc, V
CE
= 10 Vdc
Collector-Emitter Saturation Voltage
I
C
= 1.0 Adc, I
B
= 0.1 Adc
I
C
= 0.5 Adc, I
B
= 0.05 Adc
Base-Emitter Voltage
I
C
= 1.0 Adc, V
CE
= 10 Vdc
h
FE
30
40
20
160
V
CE(sat)
V
BE(on)
2.5
1.0
1.5
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 500 mAdc, V
CE
= 10 Vdc, f = 10 MHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 0.1 MHz
≤
f
≤
1.0 MHz
h
fe
C
obo
1.0
8.0
50
pF
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30 Vdc; I
C
= 0.5 Adc; I
B
= 0.05 Adc
Turn-Off Time
V
CC
= 30 Vdc; I
C
= 0.5 Adc; I
B
= I
B
= 0.05 Adc
t
on
0.25
2.5
µs
µs
t
off
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle, t = 1.0 s
Test 1
V
CE
= 6.25 Vdc, I
C
= 4.0 Adc
Test 2
V
CE
= 20 Vdc, I
C
= 1.25 Adc
Test 3
V
CE
= 50 Vdc
, I
C
= 150 mAdc
2N3766
V
CE
= 65 Vdc, I
C
= 150 mAdc
2N3767
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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