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2N5685E3

Description
Power Bipolar Transistor, 50A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, TO-3, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size120KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

2N5685E3 Overview

Power Bipolar Transistor, 50A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, TO-3, 2 PIN

2N5685E3 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionTO-3, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)50 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JEDEC-95 codeTO-204AE
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/464
DEVICES
LEVELS
2N5685
2N5686
JAN
JANTX
JANTV
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
@ T
C
= +25°C
(1)
@ T
C
= +100°C
(1)
Operating & Storage Junction Temperature Range
Total Power Dissipation
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Case
Note:
1.
Symbol
R
θJC
Max.
.0584
Unit
°C/W
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
J
, T
stg
2N5685
60
60
5.0
15
2N5686
80
80
5.0
15
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
°C
50
50
300
300
171
171
-55 to +200
TO-3 (TO-204AE)
Derate linearly 1.715 W/°C between T
C
= 25°C and T
C
= 200°C
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
(1)
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
I
C
= 100mAdc
Collector-Emitter Cutoff Current
V
CE
= 30Vdc
V
CE
= 40Vdc
Collector-Emitter Cutoff Current
V
CE
= 60Vdc, V
BE
= 1.5Vdc
V
CE
= 80Vdc, V
BE
= 1.5Vdc
Collector-Base Cutoff Current
V
CE
= 60Vdc
V
CE
= 80Vdc
Emitter-Base Cutoff Current
2N5685
2N5686
2N5685
2N5686
2N5685
2N5686
2N5685
2N5686
V
(BR)CEO
I
CEO
I
CEX
60
80
500
500
10
10
2.0
2.0
1.0
Vdc
μAdc
μAdc
I
CBO
I
EBO
mAdc
mAdc
V
EB
= 5.0Vdc
T4-LDS-0162 Rev. 1 (100546)
Page 1 of 3

2N5685E3 Related Products

2N5685E3 JANTV2N5685 2N5686E3 B15A1P-JA
Description Power Bipolar Transistor, 50A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, TO-3, 2 PIN Power Bipolar Transistor, 50A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, TO-3, 2 PIN Power Bipolar Transistor, 50A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, TO-3, 2 PIN General Specifications
Maker Microsemi Microsemi Microsemi -
package instruction TO-3, 2 PIN FLANGE MOUNT, O-MBFM-P2 TO-3, 2 PIN -
Reach Compliance Code compliant compliant compliant -
ECCN code EAR99 EAR99 EAR99 -
Shell connection COLLECTOR COLLECTOR COLLECTOR -
Maximum collector current (IC) 50 A 50 A 50 A -
Collector-emitter maximum voltage 60 V 60 V 80 V -
Configuration SINGLE SINGLE SINGLE -
Minimum DC current gain (hFE) 5 5 5 -
JEDEC-95 code TO-204AE TO-204AE TO-204AE -
JESD-30 code O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 -
Number of components 1 1 1 -
Number of terminals 2 2 2 -
Package body material METAL METAL METAL -
Package shape ROUND ROUND ROUND -
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT -
Polarity/channel type NPN NPN NPN -
surface mount NO NO NO -
Terminal form PIN/PEG PIN/PEG PIN/PEG -
Terminal location BOTTOM BOTTOM BOTTOM -
Transistor component materials SILICON SILICON SILICON -
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