PDM41252LA8SO datasheet, PDF - EEWORLD Datasheet

PDM41252LA8SO: DescriptionStandard SRAM, 64KX4, 8ns, CMOS, PDSO28; Categorystorage storage; File Size370KB，8 Pages; ManufacturerParadigm Technology Inc

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PDM41252LA8SO Overview

Standard SRAM, 64KX4, 8ns, CMOS, PDSO28

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Paradigm Technology Inc
package instruction	SOJ, SOJ28,.34
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	8 ns
Other features	HIGH IMPEDENCE OUTPUTS DURING WRITE MODE
I/O type	SEPARATE
JESD-30 code	R-PDSO-J28
JESD-609 code	e0
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	28
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64KX4
Output characteristics	3-STATE
Exportable	NO
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ28,.34
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.0005 A
Minimum standby current	2 V
Maximum slew rate	0.18 mA
Maximum supply voltage (Vsup)	5.25 V
Minimum supply voltage (Vsup)	4.75 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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