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DDTC142JE-13

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size75KB,3 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric Compare View All

DDTC142JE-13 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

DDTC142JE-13 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerDiodes Incorporated
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 21.28
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)56
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)235
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
SPICE MODELS: DDTC122LE DDTC142JE DDTC122TE DDTC142TE
DDTC (LO-R1) E
NPN PRE-BIASED 100 mA SOT-523
SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
Epitaxial Planar Die Construction
Complementary PNP Types Available (DDTA)
Built-In Biasing Resistors
Available in Lead Free/RoHS Compliant Version (Note 2)
3
A
OUT
B C
GND
NEW PRODUCT
SOT-523
Dim
A
B
C
D
G
M
Min
0.15
0.75
1.45
¾
0.90
1.50
0.00
0.60
0.10
0.10
0.45
Max
0.30
0.85
1.75
¾
1.10
1.70
0.10
0.80
0.30
0.20
0.65
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
¾
TOP VIEW
Mechanical Data
·
·
·
·
·
·
·
·
Case: SOT-523
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Solderable per MIL-STD-202, Method
208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 4, on Page 2
Terminal Connections: See Diagram
Marking: Date Code and Marking Code
(See Diagrams & Page 2)
Weight: 0.002 grams (approx.)
J
K
2
IN
G
H
1
N
H
J
K
L
M
N
a
D
L
R
1
(2) IN
R
2
OUT (3)
All Dimensions in mm
P/N
DDTC122LE
DDTC142JE
DDTC122TE
DDTC142TE
R1 (NOM) R2 (NOM) MARKING
0.22KW
0.47KW
0.22KW
0.47KW
10KW
10KW
OPEN
OPEN
N81
N82
N83
N84
GND (1)
Maximum Ratings
Supply Voltage, (3) to (1)
Input Voltage, (2) to (1)
Input Voltage, (1) to (2)
Output Current
Power Dissipation (Note 1)
@ T
A
= 25°C unless otherwise specified
Symbol
V
CC
DDTC122LE
DDTC142JE
DDTC122TE
DDTC142TE
All
V
IN
V
EBO (MAX)
I
C
P
d
R
qJA
T
j
, T
STG
Value
50
-5 to +6
-5 to +6
5
100
150
625
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
Note:
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30404 Rev. 3 - 2
1 of 3
www.diodes.com
DDTC (LO-R1) E
ã
Diodes Incorporated

DDTC142JE-13 Related Products

DDTC142JE-13 DDTC122TE-13 DDTC142TE-13 DDTC122LE-13
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
Is it lead-free? Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 21.28 BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR RATIO IS 45.45
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 40 V 40 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 56 100 100 56
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0 e0 e0
Humidity sensitivity level 1 1 1 1
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 235 235 235 235
Polarity/channel type NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10 10
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz 200 MHz
Base Number Matches - 1 1 1
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