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Datasheet> All Categories > Discrete semiconductor> The transistor> BUW85
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BUW85

Description
TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size77KB，12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUW85 Overview

TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3, BIP General Purpose Power

BUW85 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage450 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Maximum power consumption environment50 W
Maximum power dissipation(Abs)50 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Maximum opening time (tons)500 ns
VCEsat-Max1 V

BUW85 Preview

DISCRETE SEMICONDUCTORS
DATA SHEET
BUW84; BUW85
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 14
Philips Semiconductors
Product specification
Silicon diffused power transistors
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT82 package.
APPLICATIONS
•
Converters
•
Inverters
•
Switching regulators
•
Motor control systems
•
Switching applications.
ok, halfpage
BUW84; BUW85
PINNING
PIN
1
2
3
base
collector; connected to mounting base
emitter
DESCRIPTION
2
1
3
MBB008
1
2
3
MBK107
Fig.1 Simplified outline (SOT82) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CESM
BUW84
BUW85
V
CEO
collector-emitter voltage
BUW84
BUW85
V
CEsat
I
C
I
CM
P
tot
t
f
collector-emitter saturation voltage
collector current (DC)
collector current (peak value)
total power dissipation
fall time
I
C
= 1 A; I
B
= 200 mA; see Fig.7
see Figs 4 and 5
see Figs 4 and 5
T
mb
≤
25
°C;
see Fig.8
resistive load; see Fig.11
open base
−
−
−
−
−
−
0.4
400
450
1
2
3
50
−
V
V
V
A
A
W
µs
PARAMETER
collector-emitter peak voltage
V
BE
= 0
−
−
800
1000
V
V
CONDITIONS
TYP.
MAX.
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from junction to ambient in free air
VALUE
2.1
100
UNIT
K/W
K/W
1997 Aug 14
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CESM
BUW84
BUW85
V
CEO
collector-emitter voltage
BUW84
BUW85
V
EBO
I
C
I
CM
I
B
I
BM
I
BM
P
tot
T
stg
T
j
emitter-base voltage
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
base current (reversed; peak value) turn-off current
total power dissipation
storage temperature
junction temperature
T
mb
≤
25
°C;
see Fig.8
open collector
see Figs 4 and 5
t
p
= 2 ms; see Figs 4 and 5
open base
−
−
−
−
−
−
−
−
−
−65
−
PARAMETER
collector-emitter peak voltage
V
BE
= 0
−
−
CONDITIONS
BUW84; BUW85
MIN.
MAX.
800
1000
400
450
5
2
3
0.75
1
−1
50
+150
150
V
V
V
V
V
A
A
A
A
A
W
UNIT
°C
°C
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
CEOsust
BUW84
BUW85
V
CEsat
collector-emitter saturation voltage
I
C
= 0.3 A; I
B
= 30 mA;
see Fig.7
I
C
= 1 A; I
B
= 200 mA;
see Fig.7
V
BEsat
I
CES
base-emitter saturation voltage
collector-emitter cut-off current
I
C
= 1 A; I
B
= 200 mA
V
CEM
= V
CEMSmax
; V
BE
= 0;
note 1
V
CEM
= V
CEMSmax
; V
BE
= 0;
T
j
= 125
°C;
note 1
I
EBO
h
FE
emitter-base cut-off current
DC current gain
V
EB
= 5 V; I
C
= 0
V
CE
= 5 V; I
C
= 100 mA;
see Fig.10
f
T
transition frequency
V
CE
= 10 V; I
C
= 200 mA;
f = 1 MHz
PARAMETER
collector-emitter sustaining voltage
CONDITIONS
I
C
= 100 mA; I
Boff
= 0;
L = 25 mH; see Figs 2 and 3
MIN.
400
450
−
−
−
−
−
−
20
−
TYP.
−
−
−
−
−
−
−
−
−
50
20
MAX.
−
−
0.8
1
1.1
200
1.5
1
−
100
−
MHz
UNIT
V
V
V
V
V
µA
mA
mA
V
CE
= 5 V; I
C
= 5 A; see Fig.10 15
1997 Aug 14
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW84; BUW85
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
−
TYP.
MAX.
UNIT
µs
µs
µs
µs
Switching times in horizontal deflection circuit
(see Fig.11)
t
on
t
s
t
f
turn-on time
storage time
fall time
I
Con
= 1 A; I
Bon
= 200 mA;
I
Boff
=
−400
mA; V
CC
= 250 V
I
Con
= 1 A; I
Bon
= 200 mA;
I
Boff
=
−400
mA; V
CC
= 250 V
I
Con
= 1 A; I
Bon
= 200 mA;
I
Boff
=
−400
mA; V
CC
= 250 V
I
Con
= 1 A; I
Bon
= 200 mA;
I
Boff
=
−400
mA; V
CC
= 250 V;
T
mb
= 95
°C
Note
1. Measured with a half-sinewave voltage (curve tracer).
0.2
2
0.4
−
0.5
3.5
−
1.4
handbook, halfpage
+
50 V
100 to 200
Ω
L
I
halfpage
handbook,
C
(mA)
250
200
MGE239
horizontal
oscilloscope
vertical
300
Ω
1
Ω
MGE252
100
6V
30 to 60 Hz
0
VCE (V)
min
VCEOsust
Fig.2
Test circuit for collector-emitter
sustaining voltage.
Fig.3
Oscilloscope display for collector-emitter
sustaining voltage.
1997 Aug 14
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW84; BUW85
handbook, full pagewidth
10
MGB938
IC
(A)
ICM max
IC max
(1)
δ
= 0.01
tp =
20
µs
1
II
50
µs
100
µs
200
µs
(2)
10
−1
500
µs
1 ms
2 ms
I
5 ms
10 ms
DC
10
−2
III
IV
10
−3
10
10
2
10
3
VCE (V)
10
4
BUW84.
T
mb
≤
25
°C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
III - Area of permissible operation during turn-on in single transistor converters, provided R
BE
≤
100
Ω
and t
p
≤
0.6
µs.
IV - Repetitive pulse operation in this region is permissible provided V
BE
≤
0 and t
p
≤
2 ms.
(1) P
tot max
line.
(2) Second breakdown limits.
Fig.4 Forward bias SOAR.
1997 Aug 14
4
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BUW85 Related Products

BUW85 BUW84
Description TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3, BIP General Purpose Power TRANSISTOR 2 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3, BIP General Purpose Power
Is it Rohs certified? incompatible incompatible
Maker NXP NXP
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3
Reach Compliance Code unknown unknown
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 2 A 2 A
Collector-emitter maximum voltage 450 V 400 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 15 15
JESD-30 code R-PSIP-T3 R-PSIP-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Polarity/channel type NPN NPN
Maximum power consumption environment 50 W 50 W
Maximum power dissipation(Abs) 50 W 50 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 20 MHz 20 MHz
Maximum opening time (tons) 500 ns 500 ns
VCEsat-Max 1 V 1 V

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