HM51W16400B Series
4,194,304-Word
×
4-Bit Dynamic Random Access Memory
ADE-203-368A (Z)
Rev. 1.0
Nov. 10, 1994
Description
The Hitachi HM51W16400B is a CMOS dynamic RAM organized 4,194,304-word
×
4-bit. It employs the
most advanced CMOS technology for high performance and low power. The HM51W16400B offers Fast
Page Mode as a high speed access mode.
Features
•
Single 3.3 V (±0.3 V)
•
High speed
Access time : 60 ns/ 70 ns/ 80 ns (max)
•
Low power dissipation
Active mode : 288 mW/252 mW/234 mW (max)
Standby mode : 7.2 mW (max)
: 0.36 mW (max) (L-version)
Fast page mode capability
Long refresh period
4096 refresh cycles : 64 ms
: 128 ms (L-version)
4 variations of refresh
RAS-only
refresh
CAS-before-RAS
refresh
Hidden refresh
Self refresh (L-version)
Test function
16-bit parallel test mode
Self refresh operation (L-version)
Battery backup operation (L-version)
•
•
•
•
•
•
This specification is fully compatible with the 16-Mbit DRAM specifications from TEXAS INSTRUMENTS.
HM51W16400B Series
Ordering Information
Type No.
HM51W16400BS-6
HM51W16400BS-7
HM51W16400BS-8
HM51W16400BLS-6
HM51W16400BLS-7
HM51W16400BLS-8
HM51W16400BTS-6
HM51W16400BTS-7
HM51W16400BTS-8
HM51W16400BLTS-6
HM51W16400BLTS-7
HM51W16400BLTS-8
Access Time
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
300-mil 26-pin plastic TSOP II (TTP-26/24DA)
Package
300-mil 26-pinplastic SOJ(CP-26/24DB)
Pin Arrangement
HM51W16400BS/BLS Series
HM51W16400BTS/BLTS Series
V
CC
I/O1
I/O2
WE
RAS
A11
1
2
3
4
5
6
26
25
24
23
22
21
V
SS
I/O4
I/O3
CAS
OE
A9
V
CC
I/O1
I/O2
WE
RAS
A11
1
2
3
4
5
6
26
25
24
23
22
21
V
SS
I/O4
I/O3
CAS
OE
A9
A10
A0
A1
A2
A3
V
CC
8
9
10
11
12
13
19
18
17
16
15
14
(Top view)
A8
A7
A6
A5
A4
V
SS
A10
A0
A1
A2
A3
V
CC
8
9
10
11
12
13
19
18
17
16
15
14
(Top view)
A8
A7
A6
A5
A4
V
SS
2
HM51W16400B Series
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS
Supply voltage relative to V
SS
Short circuit output current
Power dissipation
Operating temperature
Storage temperature
Symbol
V
T
V
CC
Iout
P
T
Topr
Tstg
Value
–0.5 to V
CC
+ 0.5 (≤ 4.6 V (max))
–0.5 to + 4.6
50
1.0
0 to +70
–55 to +125
Unit
V
V
mA
W
°C
°C
Recommended DC Operating Conditions
(Ta = 0 to +70°C)
Parameter
Supply voltage
Input high voltage
Input low voltage
Note:
1. All voltage referred to V
SS
Symbol
V
CC
V
IH
V
IL
Min
3.0
2.0
–0.3
Typ
3.3
—
—
Max
3.6
V
CC
+ 0.3
0.8
Unit
V
V
V
Note
1
1
1
DC Characteristics
(Ta = 0 to +70°C, V
CC
= 3.3 V
±
0.3 V, V
SS
= 0 V)
HM51W16400B
-6
Parameter
Operating current
*1, *2
Standby current
Symbol Min
I
CC1
I
CC2
—
—
-7
Max Min
80
2
—
—
-8
Max Min
70
2
—
—
Max Unit Test Conditions
65
2
mA
mA
t
RC
= min
TTL interface
RAS, CAS
= V
IH
Dout = High-Z
CMOS interface
RAS, CAS
≥
V
CC
– 0.2V
Dout = High-Z
CMOS interface
RAS, CAS
≥
V
CC
– 0.2V
Dout = High-Z
—
1
—
1
—
1
mA
Standby current
(L-version)
I
CC2
—
100
—
100
—
100
µA
5
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