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DBLS155GC1G

Description
Bridge Rectifier Diode, 1 Phase, 1.5A, 600V V(RRM), Silicon, GREEN, PLASTIC, DBLS, 4 PIN
CategoryDiscrete semiconductor    diode   
File Size216KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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DBLS155GC1G Overview

Bridge Rectifier Diode, 1 Phase, 1.5A, 600V V(RRM), Silicon, GREEN, PLASTIC, DBLS, 4 PIN

DBLS155GC1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionGREEN, PLASTIC, DBLS, 4 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage600 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PDSO-G4
Maximum non-repetitive peak forward current50 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage600 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL

DBLS155GC1G Preview

DBLS151G thru DBLS159G
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Ideal for automated placement
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- UL Recognized File # E-326854
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Bridge Rectifiers
DBLS
MECHANICAL DATA
Case:
Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
Polarity as marked on the body
Weight:
0.36 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
I
F
= 1.5 A
Maximum DC reverse current
at rated DC blocking voltage
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs,1% Duty Cycle
T
J
=25
T
J
=125℃
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
R
θjL
R
θjA
T
J
T
STG
1.1
2
500
15
40
- 55 to +150
- 55 to +150
O
DBLS DBLS DBLS DBLS DBLS DBLS DBLS DBLS DBLS
151G 152G 153G 154G 155G 156G 157G 158G 159G
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
1.5
50
10.3
1.25
800
560
800
1000
700
1000
1200
840
1200
1400
980
1400
UNIT
V
V
V
A
A
A
2
s
V
μA
C/W
O
O
C
C
Document Number: DS_D1310042
Version: K13
DBLS151G thru DBLS159G
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
DBLS15xG
(Note 1)
PACKING CODE
C1
RD
GREEN COMPOUND
CODE
Suffix "G"
DBLS
50 / TUBE
1,500 / 13" Paper reel
PACKAGE
PACKING
Note 1: "x" defines voltage from 50V (DBLS151G) to 1400V (DBLS159G)
EXAMPLE
PREFERRED P/N
DBLS157G RD
DBLS157G RDG
PART NO.
DBLS157G
DBLS157G
PACKING CODE
RD
RD
G
Green compound
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
100
FIG.1 FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT (A)
2
INSTANTANEOUS REVERSE CURRENT (μA)
1.5
10
1
TJ=125℃
0.5
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
0
20
40
60
80
100
120
140
160
1
0
AMBIENT TEMPERATURE (
o
C)
0.1
TJ=25℃
0.01
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT
(A)
50
40
30
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
8.3ms Single Half Sine Wave
(JEDEC Method)
10
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT (A)
DBLS151G - DBLS157G
1
DBLS158G - DBLS159G
0.1
0.4
0.6
0.8
1
1.2
1.4
FORWARD VOLTAGE (V)
Document Number: DS_D1310042
Version: K13
DBLS151G thru DBLS159G
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
100
CAPACITANCE (pF)
A
10
f=1.0MHz
Vsig=50mVp-p
1
1
10
REVERSE VOLTAGE (V)
100
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
5.00
1.02
8.13
2.40
9.80
6.20
0.22
1.02
0.076
3.90
Max
5.20
1.20
8.51
2.60
10.30
6.50
0.33
1.53
0.33
4.10
Unit (inch)
Min
0.197
0.040
0.320
0.094
0.386
0.244
0.009
0.040
0.003
0.154
Max
0.205
0.047
0.335
0.102
0.406
0.256
0.013
0.060
0.013
0.161
DIM.
A
B
C
D
E
F
G
H
I
J
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
F
Unit (mm)
2.3
1.3
6.9
11.5
2.6
9.2
Unit (inch)
0.091
0.051
0.272
0.453
0.102
0.362
MARKING DIAGRAM
P/N
G
YW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1310042
Version: K13
DBLS151G thru DBLS159G
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1310042
Version: K13

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