PUMD17/T1 datasheet, PDF - EEWORLD Datasheet

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PUMD17/T1: DescriptionTRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-88, 6 PIN, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size69KB，12 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PUMD17/T1 Overview

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-88, 6 PIN, BIP General Purpose Small Signal

PUMD17/T1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	SC-88
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO 2.68
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	60
JESD-30 code	R-PDSO-G6
JESD-609 code	e3
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN AND PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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PEMD17; PUMD17

NPN/PNP resistor-equipped transistors;

R1 = 47 kΩ, R2 = 22 kΩ

Rev. 03 — 24 January 2005

Product data sheet

1. Product proﬁle

1.1 General description

NPN/PNP resistor-equipped transistors.

Table 1:

Product overview

Package

Philips

PEMD17

PUMD17

SOT666

SOT363

JEITA

SC-88

PEMB17

PUMB17

PEMH17

PUMH17

PNP/PNP

complement

NPN/NPN

complement

Type number

1.2 Features

Built-in bias resistors

Simpliﬁes circuit design

Reduces component count

Reduces pick and place cost

1.3 Applications

Low current peripheral driver

Control of IC inputs

Replacement of general-purpose transistors in digital applications

1.4 Quick reference data

Table 2:

Symbol

CEO

R2/R1

Quick reference data

Parameter

collector-emitter voltage

output current (DC)

bias resistor 1 (input)

bias resistor ratio

Conditions

open base

Min

0.37

Typ

0.47

Max

100

0.57

Unit

kΩ

PUMD17/T1 Related Products

	PUMD17/T1	934057893115	PEMD17	PUMD17	PUMD17/T2	934058922115
Description	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-88, 6 PIN, BIP General Purpose Small Signal	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-88, 6 PIN	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-6, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-88, 6 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-88, 6 PIN, BIP General Purpose Small Signal	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-6
Maker	NXP	NXP	NXP	NXP	NXP	NXP
package instruction	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	PLASTIC PACKAGE-6	PLASTIC, SMD, SC-88, 6 PIN	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-F6
Reach Compliance Code	unknown	unknown	compli	compli	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO 2.68	BUILT IN BIAS RESISTOR RATIO 2.68	BUILT IN BIAS RESISTOR RATIO 2.68	BUILT IN BIAS RESISTOR RATIO 2.68	BUILT IN BIAS RESISTOR RATIO 2.68	BUILT IN BIAS RESISTOR RATIO 2.68
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	60	60	60	60	60	60
JESD-30 code	R-PDSO-G6	R-PDSO-G6	R-PDSO-F6	R-PDSO-G6	R-PDSO-G6	R-PDSO-F6
Number of components	2	2	2	2	2	2
Number of terminals	6	6	6	6	6	6
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN AND PNP	NPN AND PNP	NPN AND PNP	NPN AND PNP	NPN AND PNP	NPN AND PNP
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	FLAT	GULL WING	GULL WING	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Is it Rohs certified?	conform to	-	conform to	conform to	conform to	-
Contacts	6	-	6	6	6	-
JESD-609 code	e3	-	e3	e3	e3	-
Maximum operating temperature	150 °C	-	150 °C	150 °C	150 °C	-
Peak Reflow Temperature (Celsius)	260	-	260	260	260	-
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	-
Terminal surface	TIN	-	Tin (Sn)	Tin (Sn)	TIN	-
Maximum time at peak reflow temperature	40	-	30	30	40	-

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