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P3C1256L70SNI

Description
Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.330 INCH, PLASTIC, SOIC-28
Categorystorage    storage   
File Size729KB,11 Pages
ManufacturerPyramid Semiconductor Corporation
Websitehttp://www.pyramidsemiconductor.com/
Download Datasheet Parametric View All

P3C1256L70SNI Overview

Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.330 INCH, PLASTIC, SOIC-28

P3C1256L70SNI Parametric

Parameter NameAttribute value
MakerPyramid Semiconductor Corporation
Parts packaging codeSOIC
package instruction0.330 INCH, PLASTIC, SOIC-28
Contacts28
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time70 ns
JESD-30 codeR-PDSO-G28
length18.161 mm
memory density262144 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize32KX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Maximum seat height3.048 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
width8.01 mm
P3C1256L
LOW POWER 32K x 8
STATIC CMOS RAM
FEATURES
V
CC
Current (Commercial/Industrial)
— Operating: 70mA/85mA
— CMOS Standby: 100µA/100µA
Access Times
—55/70/85
Wide Range Power Supply: 2.7V to 3.6V
Easy Memory Expansion Using
CE
and
OE
Inputs
Common Data I/O
Three-State Outputs
Fully TTL Compatible Inputs and Outputs
Advanced CMOS Technology
Automatic Power Down
Packages
— 28-Pin 600 mil DIP
— 28-Pin 330 mil SOP
— 28-Pin TSOP
DESCRIPTIOn
The P3C1256L is a 262,144-bit low power CMOS
static RAM organized as 32Kx8. The CMOS memory
requires no clocks or refreshing, and has equal access and
cycle times. Inputs are fully TTL-compatible. The RAM
operates with a wide range power supply (2.7V to 3.6V).
Access times of 55 ns and 70 ns are available. CMOS is
utilized to reduce power consumption to a low level.
The P3C1256L device provides asynchronous operation
with matching access and cycle times. Memory locations
are specified on address pins A
0
to A
14
. Reading is accom-
plished by device selection (CE and output enabling (OE)
while write enable (WE) remains HIGH. By presenting the
address under these conditions, the data in the addressed
memory location is presented on the data input/output pins.
The input/output pins stay in the HIGH Z state when either
CE
or
OE
is HIGH or
WE
is LOW.
FUnCTIOnAL BLOCk DIAgRAM
PIn COnFIgURATIOnS
DIP (P6), SOP (S11-3)
TOP VIEW
Document #
SRAM143
REV A
Revised October 2011

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