HYB18TC512800CF-25F datasheet, PDF

HYB18TC512800CF-25F: DescriptionDDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60; Categorystorage storage; File Size4MB，62 Pages; ManufacturerQIMONDA; Environmental Compliance

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HYB18TC512800CF-25F Overview

DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	QIMONDA
Parts packaging code	BGA
package instruction	TFBGA, BGA60,9X11,32
Contacts	60
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.4 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	400 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B60
length	10.5 mm
memory density	536870912 bit
Memory IC Type	DDR DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	60
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	64MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA60,9X11,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum standby current	0.009 A
Maximum slew rate	0.143 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
width	10 mm

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