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BAS17-T

Description
DIODE SILICON, STABISTOR DIODE, TO-236AB, PLASTIC PACKAGE-3, Stabistor Diode
CategoryDiscrete semiconductor    diode   
File Size98KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance  
Download Datasheet Parametric View All

BAS17-T Overview

DIODE SILICON, STABISTOR DIODE, TO-236AB, PLASTIC PACKAGE-3, Stabistor Diode

BAS17-T Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-23
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeSTABISTOR DIODE
Maximum forward voltage (VF)0.96 V
Minimum forward voltage (VF)0.87 V
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.25 W
Certification statusNot Qualified
Reverse test voltage4 V
surface mountYES
Terminal surfaceTIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40

BAS17-T Preview

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BAS17
Low-voltage stabistor
Product data sheet
Supersedes data of 1999 May 31
2003 Mar 25
NXP Semiconductors
Product data sheet
Low-voltage stabistor
FEATURES
Low-voltage stabilization
Forward voltage range: 580 to 960 mV
Total power dissipation: max. 250 mW.
APPLICATIONS
Low-voltage stabilization e.g.
– Bias stabilizer in class-B output stages
– Clipping
– Clamping
– Meter protection.
DESCRIPTION
Low-voltage stabilization diode in a small SOT23 plastic
package.
MARKING
TYPE NUMBER
BAS17
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
= W : Made in China.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
P
tot
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C
CONDITIONS
−65
MIN.
5
200
250
+150
150
MARKING CODE
(1)
∗A9
Fig.1
3
2
n.c.
handbook, halfpage
2
BAS17
PINNING
PIN
1
2
3
anode
not connected
cathode
DESCRIPTION
1
1
3
MAM185
Simplified outline (SOT23),
pin configuration and symbol.
MAX.
V
UNIT
mA
mW
°C
°C
2003 Mar 25
2
NXP Semiconductors
Product data sheet
Low-voltage stabistor
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
see Fig.2
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 5 mA
I
F
= 10 mA
I
F
= 100 mA
I
R
r
dif
S
F
C
d
reverse current
differential resistance
temperature coefficient
diode capacitance
V
R
= 4 V
I
F
= 0.5 mA
I
F
= 2 mA
I
F
= 1 mA
V
R
= 0 V; f = 1 MHz
580
665
725
750
870
120
80
−1.8
MIN.
TYP.
BAS17
MAX.
660
745
805
830
960
5
140
UNIT
mV
mV
mV
mV
mV
µA
mV/K
pF
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
330
500
UNIT
K/W
K/W
2003 Mar 25
3
NXP Semiconductors
Product data sheet
Low-voltage stabistor
GRAPHICAL DATA
BAS17
10
2
handbook, halfpage
IF
(mA)
(1)
(2)
MBG517
10
1
10
−1
0.5
T
j
= 25
°C.
(1) Minimum values.
(2) Maximum values.
0.75
VF (V)
1.0
Fig.2
Forward current as a function of forward
voltage.
2003 Mar 25
4
NXP Semiconductors
Product data sheet
Low-voltage stabistor
PACKAGE OUTLINE
BAS17
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2003 Mar 25
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