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IRL3705N

Description
HEXFET Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size429KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRL3705N Overview

HEXFET Power MOSFET

IRL3705N Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-220AB
package instructionTO-220AB, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresAVALANCHE ENERGY RATED
Avalanche Energy Efficiency Rating (Eas)340 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)77 A
Maximum drain current (ID)89 A
Maximum drain-source on-resistance0.01 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Maximum power consumption environment170 W
Maximum power dissipation(Abs)130 W
Maximum pulsed drain current (IDM)310 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
IRL3705NPbF
HEXFET
®
Power MOSFET
Logic - Level Gate Drive
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
D
V
DSS
R
DS(on)
max.
55V
0.01
89A
G
S
I
D
Description
Fifth Generation HEXFETs utilize advanced
processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all
commercial industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
S
D
G
TO-220AB
IRL3705NPbF
G
Gate
D
Drain
S
Source
Base part number
IRL3705NPbF
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRL3705NPbF
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Max.
89
63
310
170
1.1
± 16
340
46
17
5.0
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Symbol
R
JC
R
CS
R
JA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.90
–––
62
Units
°C/W
1
2018-05-25

IRL3705N Related Products

IRL3705N
Description HEXFET Power MOSFET
Is it Rohs certified? incompatible
Maker International Rectifier ( Infineon )
Parts packaging code TO-220AB
package instruction TO-220AB, 3 PIN
Contacts 3
Reach Compliance Code unknow
ECCN code EAR99
Other features AVALANCHE ENERGY RATED
Avalanche Energy Efficiency Rating (Eas) 340 mJ
Shell connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V
Maximum drain current (Abs) (ID) 77 A
Maximum drain current (ID) 89 A
Maximum drain-source on-resistance 0.01 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB
JESD-30 code R-PSFM-T3
JESD-609 code e0
Number of components 1
Number of terminals 3
Operating mode ENHANCEMENT MODE
Maximum operating temperature 175 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form FLANGE MOUNT
Peak Reflow Temperature (Celsius) 225
Polarity/channel type N-CHANNEL
Maximum power consumption environment 170 W
Maximum power dissipation(Abs) 130 W
Maximum pulsed drain current (IDM) 310 A
Certification status Not Qualified
surface mount NO
Terminal surface Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE
Terminal location SINGLE
Maximum time at peak reflow temperature 30
transistor applications SWITCHING
Transistor component materials SILICON
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