BA157GP thru BA159GP
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Junction
Fast Switching Rectifier
DO-204AL (DO-41)
Reverse Voltage
400 to 1000 V
Forward Current
1.0 A
Features
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
d*
nte
ate
P
0.205 (5.2)
0.160 (4.1)
®
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
NOTE:
Lead diameter is
0.026 (0.66)
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• High temperature metallurgically bonded construction
• For use in high frequency rectifier circuits
• Fast switching for high efficiency
• Cavity-free glass passivated junction
• Capable of meeting environmental standards of
MIL-S-19500
• 1.0 Ampere operation at T
A
=55°C with no thermal
runaway
• Typical I
R
less than 0.1µA
• High temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
Mechanical Data
for suffix "E" part numbers
0.023 (0.58)
Dimensions in inches and (millimeters)
*
Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306
Case:
JEDEC DO-204AL, molded plastic over glass body
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.012 ounce, 0.3 gram
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=55°C
Peak forward surge current
10ms single half sine-wave superimposed
on rated load at T
A
=25°C
Typical thermal resistance
(NOTE 1)
Operating junction and storage temperature range
Symbols BA157GP BA158GP BA159DGP BA159GP
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
R
ΘJA
T
J
, T
STG
400
280
400
600
420
600
1.0
20
55
– 65 to +175
800
560
800
1000
700
1000
Units
V
V
V
A
A
°C/W
°C
Electrical Characteristics
Parameter
Ratings at 25°C ambient temperature unless otherwise specified.
Symbols BA157GP BA158GP BA159DGP BA159GP
V
F
I
R
t
rr
C
J
150
250
15
1.3
5.0
500
500
Units
V
µA
ns
pF
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage T
A
=25°C
Maximum reverse recovery time at I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
Typical junction capacitance at 4.0V, 1MHz
Notes:
(1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted
Document Number 88537
08-Jul-03
www.vishay.com
1
BA157GP thru BA159GP
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curve
Average Forward Rectified Current (A)
1.0
20
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
Peak Forward Surge Current (A)
T
A
= 25°C
10ms Single Half Sine-Wave
At Rated Load
15
Resistive or
Inductive Load
0.8
0.6
10
0.4
0.2
0.375" (9.5mm) Lead Length
0
25
50
75
100
125
150
175
5
0
1
10
100
Ambient Temperature (°C)
Number of Cycles at 50 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
10
20
Fig. 4 – Typical Reverse
Characteristics
Instantaneous Reverse Current (µA)
10
T
J
= 125°C
Instantaneous Forward Current (A)
1
1
T
J
= 75°C
0.1
0.1
T
J
= 25°C
Pulse Width = 300µs
1% Duty Cycle
T
J
= 25°C
0.01
0
20
40
60
80
100
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction Capacitance
100
100
Fig. 6 – Typical Transient
Thermal Impedance
Transient Thermal Impedance (°CW)
Junction Capacitance (pF)
T
J
= 25°C
f = 1.0MH
Z
Vsig = 50mVp-p
10
10
1
1
1
10
Reverse Voltage (V)
100
0.1
0.01
0.1
1
10
100
t, Pulse Duration (sec.)
Document Number 88537
08-Jul-03
www.vishay.com
2
Embedded System
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