CLL2003TRLEADFREE datasheet, PDF

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CLL2003TRLEADFREE: DescriptionRectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size27KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CLL2003TRLEADFREE Overview

Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon,

CLL2003TRLEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	O-LELF-R2
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.25 V
JESD-30 code	O-LELF-R2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	4 A
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Minimum operating temperature	-65 °C
Maximum output current	0.2 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	260
Maximum power dissipation	0.5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	250 V
Maximum reverse current	0.1 µA
Maximum reverse recovery time	0.05 µs
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	WRAP AROUND
Terminal location	END
Maximum time at peak reflow temperature	10

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Is it lead-free?	Lead free	Contains lead	Lead free	Contains lead	Lead free	Contains lead
Is it Rohs certified?	conform to	incompatible	conform to	incompatible	conform to	incompatible
Reach Compliance Code	compliant	not_compliant	compliant	not_compliant	compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.25 V	1.25 V	1.25 V	1.25 V	1.25 V	1.25 V
JESD-30 code	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2
JESD-609 code	e3	e0	e3	e0	e3	e0
Maximum non-repetitive peak forward current	4 A	4 A	4 A	4 A	4 A	4 A
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	260	NOT SPECIFIED	260	NOT SPECIFIED
Maximum power dissipation	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	250 V	250 V	250 V	250 V	250 V	250 V
Maximum reverse current	0.1 µA	0.1 µA	0.1 µA	0.1 µA	0.1 µA	0.1 µA
Maximum reverse recovery time	0.05 µs	0.05 µs	0.05 µs	0.05 µs	0.05 µs	0.05 µs
surface mount	YES	YES	YES	YES	YES	YES
Terminal surface	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	TIN LEAD	MATTE TIN (315)	Tin/Lead (Sn/Pb)
Terminal form	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND
Terminal location	END	END	END	END	END	END
Maximum time at peak reflow temperature	10	NOT SPECIFIED	10	NOT SPECIFIED	10	NOT SPECIFIED
Maker	Central Semiconductor	-	-	Central Semiconductor	Central Semiconductor	Central Semiconductor

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