Bulletin PD-2.319 rev. D 06/06
MBR16.. Series
MBRB16.. Series
SCHOTTKY RECTIFIER
16 Amp
I
F(AV)
= 16Amp
V
R
= 35 - 45V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
range
I
FSM
V
F
T
J
@ tp = 5
μs
sine
@ 16 Apk, T
J
= 125°C
range
Description/ Features
Units
A
V
A
V
°C
The MBR16.. Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150° C junction
temperature. Typical applications are in switching power sup-
plies, converters, free-wheeling diodes, and reverse battery
protection.
150° C T
J
operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Values
16
35 - 45
1800
0.57
- 65 to 150
Case Styles
MBR16..
MBRB16..
Base
Cathode
2
Base
Cathode
2
1
3
1
3
Cathode
Anode
N/C
Anode
TO-220AC
Document Number: 93441
D
2
PAK
www.vishay.com
1
MBR16.. Series, MBRB16.. Series
Bulletin PD-2.319 rev. D 06/06
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
35
45
V
RWM
Max. Working Peak Reverse Voltage (V)
MBR1635
MBR1645
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
I
FSM
Non-Repetitive Peak Surge Current
MBR16.. Units
16
1800
A
150
A
Conditions
@ T
C
= 134 °C, (Rated V
R
)
Following any rated load
5μs Sine or 3μs Rect. pulse condition and with rated
V
RRM
applied
Surge applied at rated load condition halfwave single
phase 60Hz
T
J
= 25 °C, I
AS
= 3.6 Amps, L = 3.7 mH
Current decaying linearly to zero in 1
μsec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
E
AS
I
AR
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
24
3.6
mJ
A
Electrical Specifications
Parameters
V
FM
I
RM
C
T
L
S
Max. Forward Voltage Drop(1)
Max. Instantaneus Reverse Current
(1)
Max. Junction Capacitance
Typical Series Inductance
MBR16.. Units
0.63
0.57
0.2
40
1400
8.0
10000
V
V
mA
mA
pF
nH
V/
μs
@ 16A
@ 16A
T
J
= 25 °C
T
J
= 125 °C
Conditions
T
J
= 25 °C
T
J
= 125 °C
Rated DC voltage
V
R
= 5V
DC
(test signal range 100Khz to 1Mhz) 25°C
Measured from top of terminal to mounting plane
dv/dt Max. Voltage Rate of Change
(Rated V
R
)
(1) Pulse Width < 300μs, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
MBR16.. Units
-65 to 150
-65 to 175
1.50
0.50
2 (0.07)
Min.
Max.
6 (5)
12 (10)
°C
°C
Conditions
R
thJC
Max. Thermal Resistance Junction
to Case
R
thCS
Typical Thermal Resistance, Case
to Heatsink
wt
T
Approximate Weight
Mounting Torque
Case Style
Marking Device
°C/W DC operation
°C/W Mounting surface, smooth and greased
g (oz.)
Kg-cm
(Ibf-in)
TO-220AC, D
2
PAK JEDEC
MBR1645
MBRB1645
Case Style TO-220
Case Style D
2
Pak
Document Number: 93441
www.vishay.com
2
MBR16.. Series, MBRB16.. Series
Bulletin PD-2.319 rev. D 06/06
100
(mA)
100
Tj = 150˚C
10
1
0.1
0.01
0.001
125˚C
100˚C
75˚C
50˚C
25˚C
Instantaneous Forward Current - I
F
(A)
Reverse Current - I
R
0.0001
0
5
10 15 20 25 30 35 40 45
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
10
10000
(pF)
Tj = 25˚C
Junction Capacitance - C
T
Tj = 150˚C
Tj = 125˚C
Tj = 25˚C
1000
1
0
0.2
0.4
0.6
0.8
1
1.2
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
0
10
20
30
40
50
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
(°C/W)
10
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
thJC
1
Thermal Impedance Z
P
DM
0.1
Single Pulse
(Thermal Resistance)
t1
t2
0.01
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
10
Document Number: 93441
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3
MBR16.. Series, MBRB16.. Series
Bulletin PD-2.319 rev. D 06/06
155
Allowable Case Temperature (°C)
Average Power Loss (Watts)
15
150
145
DC
10
RMS Limit
DC
140
135
130
Square wave (D = 0.50)
Rated Vr applied
125
see note (2)
120
0
5
10
15
5
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0
20
25
0
5
10
15
20
F(AV)
25
(A)
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
Average Forward Current - I
Fig. 6 - Forward Power Loss Characteristics
(A)
10000
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
Non-Repetitive Surge Current - I
FSM
1000
100
10
100
1000
10000
Square Wave Pulse Duration - t
p
(microsec)
Fig. 7 - Max. Non-Repetitive Surge Current (Per Leg)
L
HIGH-S
PEED
S CH
WIT
FREE-WHEEL
DIODE
40HF
L40S
02
+
DUT
IR
FP460
R = 25 ohm
g
Vd = 25 Volt
CURR
ENT
MONIT
OR
Fig. 8 - Unclamped Inductive Test Circuit
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= rated V
R
applied
Document Number: 93441
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4
MBR16.. Series, MBRB16.. Series
Bulletin PD-2.319 rev. D 06/06
Outline Table
Conform to JEDEC outline TO-220AC
Dimensions in millimeters and (inches)
Conform to JEDEC outline D
2
Pak (SMD-220)
Dimensions in millimeters and (inches)
Document Number: 93441
www.vishay.com
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