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ZP1060

Description
2 A, 100 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size77KB,2 Pages
ManufacturerOKAYA
Websitehttps://www.okaya.com
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ZP1060 Overview

2 A, 100 V, SILICON, RECTIFIER DIODE

ABD
(Avalanche Breakdown Diode)
RSSA
ZP, CP, U, B
SERIES
SURGE PROTECTIVE DEVICES
The Silicon Surge Absorber is available in five
series that support the countermeasure against a
wide range of surge from low to high, including
electrostatic discharges and lightning surges. The
device may also be used as a constant voltage
device where high voltage or high power is
required.
Series
Unidirectional Dual-directional
Maximum permissible power
1000
1500
2000
3000
5000
ZP
ZP
U
U
U
CP
CP
B
B
B
8/20μs
6,000 W
15,000W
18,000W
34,000W
44,000W
10/100μs
500 W
1,300W
1,500W
3,500W
5000W
Dimensions
min
W±0.4
min
φ
D±0.4
Cathode marking (ZP, U)
Unit: mm
φ
d±0.05
Series
1000
1500
2000
3000
5000
Dimensions (mm)
d
D
W
0.6
2.8
5.0
5.3
8.5
9.7
9.7
8.6
12.3
1.0
1.2
20
Electrical Specifications
1000 Series
Model Number*¹
1007
ZP1010
1012
1016
1018
ZP1027
ZP1040
1050*²
ZP1060
ZP1075*²
ZP1120
Breakdown Voltage
I
T
(mA)
V
BR
(V)
7.5
10
12
16
18
1
27
40
50
60
75
120
Maximum peak pulse power 6,000W (8/20μsec)
Standoff Voltage
V
WM
(V)
I
R
(μA)
200
6.05
10
8.10
9.72
12.9
14.5
21.8
5
32.4
40.5
48.6
60.7
97.0
Surge Waveform 8/20μsec
I
PPM
(A)
V
C
(V)
419
14.3
311
19.5
267
22.7
213
28.4
178
34.0
120
50.5
83
73.0
68.9
88.0
52.6
114
42.2
142
27.3
222
*¹ ZP: Unidirectional, CP: Dual-directional,
: Both ZP and CP
*² Requirements may vary depending on the quantity orderd. Please ask for details.
1500 Series
Model Number*
1.5K007
1.5K018
1.5K022
1.5K033
1.5K047
Breakdown Voltage
I
T
(mA)
V
BR
(V)
7.5
10
18
22
1
33
47
: Both ZP and CP
140
Maximum peak pulse power 15,000W (8/20μsec)
Standoff Voltage
I
R
(μA)
V
WM
(V)
6.05
1,000
14.5
17.8
5
26.8
38.1
Surge Waveform 8/20μsec
V
C
(V)
I
PPM
(A)
1034
14.5
462
32.5
382
39.3
253
59.0
178
84.0
* ZP: Unidirectional, CP: Dual-directional,

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