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MMBT2907A-AU_R2_000A1

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size103KB,7 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMBT2907A-AU_R2_000A1 Overview

Small Signal Bipolar Transistor,

MMBT2907A-AU_R2_000A1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
Reach Compliance Codecompliant
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
GuidelineAEC-Q101; TS 16949
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Maximum off time (toff)100 ns
Maximum opening time (tons)45 ns

MMBT2907A-AU_R2_000A1 Preview

MMBT2907A-AU
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
FEATURES
PNP epitaxial silicon, planar design
Collector-emitter voltage VCE = -60V
Collector current IC = -600mA
Acquire quality system certificate : TS16949
AEC-Q101 qualified
Lead free in compliance with EU RoHS 2011/65/EU directive
Green molding compound as per IEC61249 Std. . (Halogen Free)
0.079(2.00)
0.008(0.20)
0.003(0.08)
0.056(1.40)
0.047(1.20)
0.120(3.04)
0.110(2.80)
60 Volt
POWER
225 mWatt
0.006(0.15)MIN.
0.044(1.10)
0.035(0.90)
0.020(0.50)
0.013(0.35)
MECHANICAL DATA
Case: SOT-23
Terminals: Solderable per MIL-STD-750,Method 2026
Approx Weight: 0.0003 ounces, 0.0084 grams
Device Marking: M7A
0.070(1.80)
0.004(0.10)
0.000(0.00)
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
Value
-60
-60
-5.0
-600
Units
V
V
V
mA
V
CEO
V
CBO
V
EBO
I
C
THERMAL CHATACTERISTICS
Parameter
Max Power Dissipation (Note 1)
Storage Temperature
Junction Temperaure
Thermal Resistance, Junction to Ambient
Symbol
Value
225
-55 to 150
-55 to 150
556
Units
mW
O
P
TOT
T
STG
T
J
R
ΘJA
C
C
O
O
C/W
Note 1 : Transistor mouted on FR-4 board 70 x 60 x 1 mm.
STAD-JUN.29.2005
PAGE . 1
MMBT2907A-AU
ELECTRICAL CHARACTERISTICS
Parameter
(T
J
=25
O
C, unless otherwise noted)
Symbol
Test Condition
Min.
Typ.
Max.
Units
Collector-Emitter Breakdown Voltage
V
(BR)
CEO
V
(BR)
CBO
V
(BR)
EBO
I
BL
I
CEX
I
C
=-10mA,I
B
=0
I
C
=-10μA,I
E
=0
I
E
=-10μA,I
C
=0
V
CE
=-30V,V
EB
=-0.5V
V
CE
=-30V,V
EB
=-0.5V
V
CE
=-50V,I
E
=0
-60
-
-
V
Collector-Base Breakdown Voltage
-60
-
-
V
Emitter-Base Breakdown Voltage
-5.0
-
-
V
Base Cutoff Current
-
-
-50
nA
-
-
-50
nA
Collector Cutoff Current
-
-
-10
nA
μA
I
CBO
V
CE
=-50V,I
E
=0
T
J
=125
O
C
-
75
100
100
100
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-10
-
-
-
300
-
-0.4
-1.6
-1.3
-2.6
8.0
DC Current Gain
h
FE
I
C
=-0.1mA,V
CE
=-10V
I
C
=-1.0mA,V
CE
=-10V
I
C
=-10mA,V
CE
=-10V
I
C
=-150mA,V
CE
=-10V
I
C
=-500mA,V
CE
=-10V
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
V
CB
=-10V,I
E
=0,f=1MHz
V
CB
=-2V,I
C
=0,f=1MHz
I
C
=-50mA,V
CE
=-20V,
f=100MHz
V
CC
=-30V,V
BE
=-0.5V,
I
C
=-150mA,I
B
=-15mA
V
CC
=-30V,V
BE
=-0.5V,
I
C
=-150mA,I
B
=-15mA
V
CC
=-30V,V
BE
=-0.5V,
I
C
=-150mA,I
B1
=-15mA
V
CC
=-6V,I
C
=-150mA,
I
B1
=I
B2
=-15mA
V
CC
=-6V,I
C
=-150mA,
I
B1
=I
B2
=-15mA
V
CC
=-6V,I
C
=-150mA,
I
B1
=I
B2
=-15mA
-
Collector-Emitter Saturation Voltage
V
CE(SAT)
V
BE(SAT)
C
CBO
C
EBO
F
T
t
on
t
d
t
r
t
off
t
s
t
f
V
Base-Emitter Saturation Voltage
V
Collector-Base Capacitance
pF
Emitter-Base Capacitance
-
-
30
pF
Current Gain-Bandwidth Product
200
-
-
MHz
Turn-On Time
-
-
45
ns
Delay Time
-
-
10
ns
Rise Time
-
-
40
ns
Turn-Off Time
-
-
100
ns
Storage Time
-
-
80
ns
Fall Time
-
-
30
ns
STAD-JUN.29.2005
PAGE . 2
MMBT2907A-AU
h
FE
, NORMALIZED CUTTENT GAIN
3.0
2.0
VCE=-1.0V
VCE=-10V
T
J
=125 C
25 C
1.0
0.7
0.5
0.3
0.2
-0.1
-55 C
O
O
O
-0.2 -0.3
-0.5 -0.7 -1.0
-2.0 -3.0
-5.0 -7.0 -10
-20
-30
-50 -70 -100
-200 -300
-500
I
C
, COLLECTOR CURRENT (mA)
Fig.1-DC Cuttent Gain
-1.0
V
CE
, COLLECTOR-EMITTER
VOLTAGE (VOLTS)
-0.8
I
C
=-1.0mA
-10mA
-100mA
-500mA
-0.6
-0.4
-0.2
0
-0.005 -0.01
-0.02 -0.03
-0.05
-0.07 -0.1
-0.2 -0.3
-0.5 -0.7 -1.0
-2.0 -3.0
-5.0 -7.0 -10
-20 -30
-50
I
B
, BASE CUTTENT (mA)
Fig.2-Collector Saturation Region
300
200
100
70
50
30
20
10
7.0
5.0
500
t
r
V
CC
=-30V
I
C
/I
B
=10
O
T
J
=25 C
t, TIME (ns)
300
200
100
70
50
30
20
t
f
t, TIME (ns)
V
CC
=-30V
I
C
/I
B
=10
I
B1=
I
B2
T
J
=25
O
C
t
s
=t
s
-1/8t
f
,
td@V
BE(OFF)
=0V
2.0V
3.0
-5.0 -7.0 -10
-20 -30 -50 -70 -100
-200 -300 -500
I
C
, COLLECTOR CURRENT
Fig.3-Turn-On Time
10
7.0
5.0
-5.0 -7.0 -10
-20 -30 -50 -70 -100
-200-300 -500
I
C
,COLLECTOR CURRENT (mA)
Fig.4-Turn-Off Time
STAD-JUN.29.2005
PAGE . 3
MMBT2907A-AU
10
10
f=1.0kHz
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
8.0
6.0
I
C
=-1.0mA,R
S
=430
W
-500
m
A,R
S
=560
W
-50
m
A,R =2.7k
W
-100
m
A,R =1.6
W
8.0
I
C
=-50
m
A
-100
m
A
-500
m
A
-1.0mA
6.0
4.0
R
S
=OPTIMUM SOURCE RESISANCE
2.0
4.0
2.0
0
0.01 0.02
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0
50 100
200
500 1.0k 2.0k 5.0k 10k 20k
R
S
, SOURGE RESISTANCE (OHMS)
Fig.6-Source Resistance Effects
f,FREQUENCY (kHz)
Fig.5-Frequency Effects
50k
30
f
T
, CURR ENT-G AIN-B ANDW IDTH
PROD UCT (MHz)
400
C
eb
300
200
C,CAPA CITANC E (pF)
20
10
7.0
5.0
C
cb
100
80
60
40
30
20
-1.0 -2.0
V
CE
=-20V
O
T
J
=25 C
3.0
2.0
-0.1
-0.2 -0.3 -0.5
-1.0
-2.0-3.0 -5.0
-10
-20 -30
REVERSE VOLTAGE (VOLTS)
-5.0
-10 -20
-50 -100 -200
-500-1000
I
C
, COLLECTOR CUTTENT (mA)
Fig.8-Current-Gain-Bandwidth Product
Fig.7-Capacitances
-1.0
T
J
=25 C
O
+0.5
V
BE(sat)
@I
C
/I
B
=10
O
COEFFIC IENT (mV/ C)
-0.8
V,VOLTAGE (VOLTS)
0
R
QVC
for V
CE(sat)
-0.5
-1.0
-1.5
-2.0
-0.6
V
BE(on)
@V
CE
=-10V
-0.4
-0.2
V
CE(sat)
@ I
C
/I
B
=10
0
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20
R
QVB
for V
BE
-50 -100-200 -500
I
C
,COLLECTOR CURRENT (mA)
Fig.9-On Voltage
-2.5
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
I
C
,COLLECTOR CUTTENT (mA)
Fig.10-Temperature Coefficients
STAD-JUN.29.2005
PAGE . 4
MMBT2907A-AU
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
STAD-JUN.29.2005
PAGE . 5
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