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IRFS4310ZTRLPBF

Description
120 A, 100 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
CategoryDiscrete semiconductor    The transistor   
File Size336KB,11 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRFS4310ZTRLPBF Overview

120 A, 100 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

IRFS4310ZTRLPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)130 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)127 A
Maximum drain current (ID)120 A
Maximum drain-source on-resistance0.006 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)250 W
Maximum pulsed drain current (IDM)560 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD -
97115D
IRFB4310ZPbF
IRFS4310ZPbF
IRFSL4310ZPbF
HEXFET
®
Power MOSFET
Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
Benefits
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
D
G
S
D
V
DSS
R
DS(on)
typ.
max.
I
D
(Silicon Limited)
I
D
(Package Limited)
D
D
100V
4.8m
:
6.0m
:
127A
c
120A
G
D
S
G
D
S
G
D
S
TO-220AB
IRFB4310ZPbF
G
D
2
Pak
IRFS4310ZPbF
D
TO-262
IRFSL4310ZPbF
S
G ate
Drain
Source
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
f
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
127c
90c
120
560
250
1.7
± 20
18
-55 to + 175
300
10lbxin (1.1Nxm)
475
See Fig. 14, 15, 22a, 22b,
Units
A
W
W/°C
V
V/ns
°C
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
e
Avalanche Current
c
Repetitive Avalanche Energy
g
mJ
A
mJ
Thermal Resistance
Symbol
R
JC
R
CS
R
JA
R
JA
Parameter
Junction-to-Case
k
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220
k
Junction-to-Ambient (PCB Mount) , D Pak
jk
2
Typ.
–––
0.50
–––
–––
Max.
0.6
–––
62
40
Units
°C/W
www.irf.com
1
4/23/12
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