PD - 97031D
IRF2907ZS-7PPbF
Features
l
l
l
l
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Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
HEXFET
®
Power MOSFET
D
V
DSS
= 75V
R
DS(on)
= 3.8mΩ
G
S
Description
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques and advanced packaging
technology to achieve extremely low on-resistance
and world -class current ratings. Additional features
of this design are a 175°C junction operating tem-
perature, fast switching speed and improved repeti-
tive avalanche rating . These features combine to
make this design an extremely efficient and reliable
device for use in Server & Telecom OR'ing and low
voltage Motor Drive Applications.
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
I
D
= 160A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Max.
180
120
160
700
300
2.0
± 20
160
410
See Fig.12a,12b,15,16
-55 to + 175
Units
A
c
W
W/°C
V
mJ
A
mJ
°C
c
h
d
g
Thermal Resistance
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
j
Parameter
Typ.
–––
0.50
Max.
0.50
–––
62
40
Units
°C/W
j
ij
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
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1
07/23/10
IRF2907ZS-7PPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
SMD
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
75
–––
–––
2.0
94
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.066
3.0
–––
–––
–––
–––
–––
–––
170
55
66
21
90
92
44
4.5
7.5
7580
970
540
3750
650
1110
–––
–––
3.8
4.0
–––
20
250
200
-200
260
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 110A
V V
DS
= V
GS
, I
D
= 250µA
S V
DS
= 25V, I
D
= 110A
µA V
DS
= 75V, V
GS
= 0V
V
DS
= 75V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
V
GS
= -20V
nC I
D
= 110A
V
DS
= 60V
V
GS
= 10V
ns V
DD
= 38V
I
D
= 110A
R
G
= 2.6Ω
V
GS
= 10V
D
nH Between lead,
e
e
d
6mm (0.25in.)
from package
G
S
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 60V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
35
40
160
A
700
1.3
53
60
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
S
p-n junction diode.
T
J
= 25°C, I
S
= 110A, V
GS
= 0V
T
J
= 25°C, I
F
= 110A, V
DD
= 38V
di/dt = 100A/µs
e
e
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C,
L=0.026mH, R
G
= 25Ω, I
AS
= 110A, V
GS
=10V.
Part not recommended for use above this value.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80%
V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
2
Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
of approximately 90°C.
2
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IRF2907ZS-7PPbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
4.5V
10
4.5V
≤
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
10
0.1
1
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
Gfs, Forward Transconductance (S)
200
T J = 25°C
150
T J = 175°C
100
ID, Drain-to-Source Current
(Α)
100
10
T J = 175°C
1
T J = 25°C
50
V DS = 10V
380µs PULSE WIDTH
0
0
25
50
75
100
125
150
0.1
1
2
3
4
VDS = 25V
≤60µs
PULSE WIDTH
5
6
7
8
VGS, Gate-to-Source Voltage (V)
ID,Drain-to-Source Current (A)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
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3
IRF2907ZS-7PPbF
100000
C oss = C ds + C gd
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
12.0
ID= 110A
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 60V
VDS= 38V
VDS= 15V
C, Capacitance(pF)
10000
Ciss
Coss
1000
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
50
100
150
200
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
1000
1msec 100µsec
T J = 175°C
T J = 25°C
100
10
10
LIMITED BY PACKAGE
10msec
1
VGS = 0V
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1.0
DC
0.1
10.0
100.0
VDS, Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF2907ZS-7PPbF
200
Limited By Package
160
ID, Drain Current (A)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
3.0
ID = 180A
2.5
VGS = 10V
120
2.0
80
1.5
40
1.0
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
Ri (°C/W)
τi
(sec)
τ
C
0.1072
0.000096
τ
0.2787
0.1143
0.002614
0.013847
τ
1
τ
2
τ
3
0.001
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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