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Datasheet> All Categories > storage> storage> WEDF1M32B-90H1I5A
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WEDF1M32B-90H1I5A

Description
Flash Module,
Categorystorage    storage   
File Size725KB，9 Pages
ManufacturerMercury Systems Inc
Download Datasheet Parametric View All

WEDF1M32B-90H1I5A Overview

Flash Module,

WEDF1M32B-90H1I5A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMercury Systems Inc
package instructionPGA, PGA66,11X11
Reach Compliance Codecompliant
Maximum access time90 ns
Other featuresUSER CONFIGURABLE AS 4MX8
Spare memory width16
startup blockBOTTOM
Data retention time - minimum20
JESD-30 codeS-CPGA-P66
length27.3 mm
memory density33554432 bit
Memory IC TypeFLASH MODULE
memory width32
Number of functions1
Number of departments/size1,2,1,15
Number of terminals66
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX32
Output characteristics3-STATE
Package body materialCERAMIC
encapsulated codePGA
Encapsulate equivalent codePGA66,11X11
Package shapeSQUARE
Package formGRID ARRAY
Parallel/SerialPARALLEL
Programming voltage5 V
Maximum seat height4.6 mm
Department size16K,8K,32K,64K
Maximum standby current0.00002 A
Maximum slew rate0.2 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formPIN/PEG
Terminal pitch2.54 mm
Terminal locationPERPENDICULAR
typeNOR TYPE
width27.3 mm

WEDF1M32B-90H1I5A Preview

1Mx32 5V NOR FLASH MODULE
WEDF1M32B-XXX5
FEATURES

Access Times of 70, 90, 120ns

Packaging:
• 66 pin, PGA Type, 1.075” square, Hermetic Ceramic HIP
(Package 400)
• 68 lead, 22mm Low Profile CQFP, 3.5mm (0.140”),
(Package 510)

Sector Architecture
• One 16KByte Sectors
• Two 8KByte Sectors
• One 32KByte Sectors
• Fifteen 64KByte Sectors

1,000,000 Erase/Program Cycles

Organized as 1Mx32, user configurable as 2Mx16 or 4Mx8.

Commercial, Industrial and Military Temperature Ranges

5V ± 10% for Read and Write Operations.

Low Power CMOS

Embedded Erase and Program Algorithm

Built-in Decoupling Caps and Multiple Ground Pins for Low
Noise Operation

Weight
WEDF1M32B-XG2UX5 - 8 grams typical
WEDF1M32B-XH1X5 - 13 grams typical
* This product is under development, is not qualified or characterized and is subject to change or
cancellation without notice.
PIN CONFIGURATION FOR WF1M32B-XH1X5
TOP VIEW
1
I/O
8
I/O
9
I/O
10
A
14
A
16
A
11
A
0
A
18
I/O
0
I/O
1
I/O
2
11
22
12
RESET#
CS
2
#
GND
I/O
11
A
10
A
9
A
15
V
CC
CS
1
#
A
19
I/O
3
33
23
I/O
15
I/O
14
I/O
13
I/O
12
OE#
A
17
WE#
I/O
7
I/O
6
I/O
5
I/O
4
I/O
24
I/O
25
I/O
26
A
7
A
12
NC
A
13
A
8
I/O
16
I/O
17
I/O
18
44
34
V
CC
CS
4
#
NC
I/O
27
A
4
A
5
A
6
NC
CS
3
#
GND
I/O
19
55
45
I/O
31
I/O
30
I/O
29
I/O
28
A
1
A
2
A
3
I/O
23
I/O
22
I/O
21
I/O
20
66
56
PIN DESCRIPTION
I/O0-31
A0-19
WE#
CS1-4#
OE#
RESET#
V
CC
GND
NC
Data Inputs/Outputs
Address Inputs
Write Enable
Chip Selects
Output Enable
Reset
Power Supply
Ground
Not Connected
Block Diagram
CS1#
RESET#
WE#
OE#
A0-19
1M x 8
1M x 8
1M x 8
1M x 8
CS2#
CS3#
CS4#
8
8
8
8
I/O0-7
I/O8-15
I/O16-23
I/O24-31
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
1
4338.06E-0816-ss-WEDF1M32B-XXX5
WEDF1M32B-XXX5
PIN CONFIGURATION FOR WF1M32B-XG2UX5
TOP VIEW
I/O0-31
RESET#
A0
A1
A2
A3
A4
A5
CS3#
GND
CS4#
WE1#
A6
A7
A8
A9
A10
V
CC
PIN DESCRIPTION
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Reset/Powerdown
Power Supply
Ground
A0-19
WE1-4#
CS1-4#
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
GND
I/O24
I/O25
I/O26
I/O27
I/O28
I/O29
I/O30
I/O31
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
GND
I/O8
I/O9
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
10
60
11
59
12
58
13
57
14
56
15
55
16
54
17
53
18
52
19
51
20
50
21
49
22
48
23
47
24
46
25
45
26
44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
V
CC
A11
A12
A13
A14
A15
A16
CS1#
OE#
CS2#
A17
WE2#
WE3#
WE4#
A18
A19
NC
OE#
RESET#
V
CC
GND
BLOCK DIAGRAM
WE1# CS1#
RESET#
OE#
A0-19
1M x 8
1M x 8
1M x 8
1M x 8
WE2# CS2#
WE3# CS3#
WE4# CS4#
8
8
8
8
I/O0-7
I/O8-15
I/O16-23
I/O24-31
The Microsemi 68 lead G2U CQFP
fi
lls the same
fi
t and function as the
JEDEC 68 lead CQFJ or 68 PLCC. But the G2U has the TCE and lead
inspection advantage of the CQFP form.
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
2
4338.06E-0816-ss-WEDF1M32B-XXX5
WEDF1M32B-XXX5
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage with Respect to GND – V
CC
Voltage with Respect to GND – A9, OE#, and
RESET (2)
Voltage with Respect to GND – All other pins (1)
Output Short Circuit Current
-0.5 to +7.0
-2.0 to +12.5 V
-2.0 to +7.0 V
200
Unit
V
V
V
mA
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
V
CC
V
IH
V
IL
T
A
Min
4.5
2.0
-0.5
-55
Max
5.5
V
CC
+ 0.5
+0.8
+125
Unit
V
V
V
°C
NOTES:
1. Minimum DC voltage is -0.5V on input/output pins. During transitions, this level may undershoot
to -2.0V for periods <20ns. Maximum DC voltage on input/output pins is V
CC
+ 0.5V which,
during transitions, may overshoot to V
CC
+ 2.0V for periods <20ns.
2. Minimum DC input voltage on pins A9, OE#, and RESET is -0.5V. During voltage transitions,
A9, OE#, and RESET may undershoot Vss to -2.0V for periods of up to 20ns. See Figure 6.
Maximum DC input voltage on pin A9 is +12.5V which may overshoot to +13.5V for periods up
to 20ns.
3. Output shorted for no more than one second. No more than one output shorted at a time.
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a Stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
CAPACITANCE
T
A
= +25°C
Parameter
OE# capacitance
WE#1-4 capacitance
CS1-4 capacitance
Data I/O capacitance
Address input capacitance
Symbol
C
OE
C
WE
C
CS
C
I/O
C
AD
Conditions
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
Max
50
20
20
20
50
Unit
pF
pF
pF
pF
pF
This parameter is guaranteed by design but not tested.
DATA RETENTION
Parameter
Minimum Pattern Data
Retention Time
Test Conditions
150°C
125°C
Min
10
20
Unit
Years
Years
AC TEST CIRCUIT
Parameter
Input Pulse Levels
I
OL
Current Source
AC TEST CONDITIONS
Typ
V
IL
= 0, V
IH
= 2.5
5
1.5
1.5
Unit
V
ns
V
V
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z0 = 75
Ω.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
D.U.T.
C
eff
= 50 pf
(Bipolar Supply)
V
Z
≈
1.5V
I
OH
Current Source
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
3
4338.06E-0816-ss-WEDF1M32B-XXX5
WEDF1M32B-XXX5
DC CHARACTERISTICS – CMOS COMPATIBLE
V
CC
= 5.0V, GND = 0V, -55°C
≤
T
A
≤
+125°C
Parameter
Input Leakage Current
Output Leakage Current
V
CC
Read Current (1, 2)
V
CC
Write Current (2, 3 ,4)
V
CC
Standby Current (2, 5)
Output Low Voltage
Output High Voltage
Low V
CC
Lock-Out Voltage (4)
Symbol
I
LI
I
LO
I
CC1
I
CC2
I
CC3
V
OL
V
OH
V
LKO
Conditions
V
IN
= V
CC
to GND
V
OUT
= V
CC
to GND
CS# = V
IL
, OE# = V
IH
, f = 5MHz, IOUT = 0mA
CS# = V
IL
, OE# = V
IH
CS# = RESET# = OE# = CS = V
IH
, f = 5MHz
V
CC
= 4.5, I
OL
= 4.0 mA
V
CC
= 4.5, I
OH
= -2.5 mA
Min
Max
10
10
160
200
20.0
0.45
4.2
Unit
μA
μA
mA
mA
μA
V
V
V
2.4
3.2
NOTES:
1. The I
CC
current listed is typically less than 2mA/MHz, with OE# at V
IH
.
2. Maximum I
CC
specifications are tested with V
CC
= V
CC
max
3. I
CC
active while Embedded Erase or Embedded Program is in progress.
4. Not 100% tested.
5. I
CC3
= 20μA max at extended temperature (> +85°C).
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS – CS# CONTROLLED
V
CC
= 5.0V, GND = 0V, -55°C
≤
T
A
≤
+125°C
Parameter
Write Cycle Time
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Chip Select Hold Time
Write Enable Pulse Width High
Programming Operation (2)
Sector Erase Operation (3)
Write Recovery before Read
Chip Programming Time
NOTES:
1. Guaranteed by design, not tested.
2. Typical value for t
WHWH1
is 7μs.
3. Typical value for t
WHWH2
is 1sec.
Symbol
t
AVAV
t
ELWL
t
WLWH
t
AVWH
t
DVWH
t
WHDX
t
WLAX
t
WHEH
t
WHWL
t
WHWH1
t
WHWH2
t
WHECL
0
t
WC
t
CS
t
WP
t
AS
t
DS
t
DH
t
AH
t
CH
t
WPH
Min
70
0
345
0
35
0
45
0
20
-70
Max
Min
90
0
45
0
45
0
45
0
20
300
8
0
50
-90
Max
Min
120
0
50
0
50
0
50
0
20
300
8
0
50
-120
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
NS
300
8
50
μs
sec
μs
sec
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
4
4338.06E-0816-ss-WEDF1M32B-XXX5
WEDF1M32B-XXX5
AC CHARACTERISTICS – WRITE OPERATIONS – CS# CONTROLLED
(1)
V
CC
= 5.0V, GND = 0V, -55°C
≤
T
A
≤
+125°C
Parameter
Write Enable Cycle Time
Write Enable Setup Time
Chip Select Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Write Enable Hold Time
Chip Select Pulse Width High
Programming Operation (1)
Sector Erase Operation (2)
Write Recovery before Read
NOTES:
1. Typical value for t
WHWH1
is 7μs.
2. Typical value for t
WHWH2
is 1sec.
Symbol
t
AVAV
t
WLEL
t
ELEH
t
AVEH
t
DVEH
t
EHDX
t
EHAX
t
EHWH
t
EHEL
t
WHWH1
t
WHWH2
t
EHGL
t
WC
t
WS
t
CP
t
AS
t
DS
t
DH
t
AH
t
WH
t
EPH
Min
70
0
35
0
30
0
45
0
20
-70
Max
Min
90
0
45
0
45
0
45
0
20
-90
Max
Min
120
0
50
0
50
0
50
0
20
-120
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
μs
sec
μs
μs
300
8
0
0
300
8
0
300
8
AC CHARACTERISTICS – READ-ONLY OPERATIONS
V
CC
= 5.0V, GND = 0V, -55°C
≤
T
A
≤
+125°C
Parameter
Read Cycle Time
Address Access Time
Chip Select to Output Valid (1)
Output Enable to Output Valid (1)
Chip Select to Output Low Z (2)
Chip Select High to Output High Z (2)
Output Enable to Output Low Z (2)
Output Enable High to Output High Z (2)
Output Hold from Addresses, CS# or OE#
Change, Whichever is First (2)
Symbol
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
ELQX
t
EHQZ
t
GLQX
t
GHQZ
t
RC
t
ACC
t
CE
t
OE
t
LZ
t
HZ
t
OLZ
t
DF
t
OH
Min
70
-70
Max
70
70
30
0
20
0
20
0
0
0
20
0
0
20
0
30
Min
90
-90
Max
90
90
35
0
50
Min
120
-120
Max
120
120
50
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
NOTES:
1. OE# may be delayed up to t
CE
-t
OE
after the falling edge of CS# without impact on t
CS
.
2. Guaranteed by design, not tested.
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
5
4338.06E-0816-ss-WEDF1M32B-XXX5
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