HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3511S02
X TO Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure and high associated gain
NF = 0.30 dB TYP., G
a
= 13.5 dB TYP. @ f = 12 GHz
• Micro-X plastic (S02) package
APPLICATIONS
• X to Ku-band DBS LNB
• Other X to Ku-band communication systems
ORDERING INFORMATION
Part Number
NE3511S02-T1C
NE3511S02-T1D
Order Number
NE3511S02-T1C-A
NE3511S02-T1D-A
Package
S02 (Pb-Free)
Quantity
2 kpcs/reel
10 kpcs/reel
Marking
B
Supplying Form
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3511S02-A
ABSOLUTE MAXIMUM RATINGS (T
A
= +25C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
G
P
tot
Note
Ratings
4
3
I
DSS
100
165
+125
65
to +125
Unit
V
V
mA
A
mW
C
C
T
ch
T
stg
Note
Mounted on 1.08 cm
2
1.0 mm (t) glass epoxy PCB
Caution
:
Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PG10642EJ01V0DS (1st edition)
Date Published October 2006 NS CP(N)
NE3511S02
RECOMMENDED OPERATING CONDITIONS (T
A
= +25C)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
V
DS
I
D
P
in
MIN.
1
5
TYP.
2
10
MAX.
3
20
0
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (T
A
= +25C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Symbol
I
GSO
I
DSS
V
GS (off)
g
m
NF
G
a
V
GS
=
3
V
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 2 V, I
D
= 100
A
V
DS
= 2 V, I
D
= 10 mA
V
DS
= 2 V, I
D
= 10 mA, f = 12 GHz
Test Conditions
MIN.
20
0.2
50
12.5
TYP.
0.5
40
0.7
65
0.30
13.5
MAX.
10
70
1.7
0.45
Unit
A
mA
V
mS
dB
dB
2
Data Sheet PG10642EJ01V0DS
NE3511S02
TYPICAL CHARACTERISTICS (T
A
= +25C, unless otherwise specified)
Remark
The graphs indicate nominal characteristics.
Data Sheet PG10642EJ01V0DS
3
NE3511S02
RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm)
RT/duroid 5880/ROGERS
t = 0.254 mm
r
= 2.20
tan delta = 0.0009 @10 GHz
Data Sheet PG10642EJ01V0DS
5
Microcontroller MCU
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