DDR SDRAM 256Mb E-die (x8)
DDR SDRAM
256Mb E-die DDR SDRAM Specification
54 sTSOP-II(300mil x 551mil)
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Rev. 1.3 July. 2005
DDR SDRAM 256Mb E-die (x8)
Table of Contents
DDR SDRAM
1.0 Key Features ...............................................................................................................................4
2.0 Ordering Information ...................................................................................................................4
3.0 Operating Frequencies................................................................................................................4
4.0 Pin Description ............................................................................................................................5
5.0 Package Physical Dimension .....................................................................................................6
6.0 Block Diagram (8Mbit x8 I/O x4 Banks) .....................................................................................7
7.0 Input/Output Function Description ............................................................................................8
8.0 Command Truth Table.................................................................................................................9
9.0 General Description...................................................................................................................10
10.0 Absolute Maximum Rating .....................................................................................................10
11.0 DC Operating Conditions ........................................................................................................10
12.0 DDR SDRAM Spec Items & Test Conditions .........................................................................11
13.0 Input/Output Capacitance ......................................................................................................11
14.0 Detailed test condition for DDR SDRAM IDD1 & IDD7A ......................................................12
15.0 DDR SDRAM IDD spec table ..................................................................................................13
16.0 AC Operating Conditions .......................................................................................................14
17.0 AC Overshoot/Undershoot specification for Address and Control Pins............................14
18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins...............................15
19.0 AC Timming Parameters & Specifications ...........................................................................16
20.0 System Characteristics for DDR SDRAM ..............................................................................17
21.0 Component Notes ....................................................................................................................18
22.0 System Notes ...........................................................................................................................20
23.0 IBIS : I/V Characteristics for Input and Output Buffers ........................................................21
Rev. 1.3 July. 2005
DDR SDRAM 256Mb E-die (x8)
Revision History
Revision
0.0
1.0
1.1
1.2
1.3
Month
February
July
August
October
July
Year
2003
2003
2003
2004
2005
- First version for internal review
- Revision 1.0 datasheet release
- Corrected typo in package phyisical dimension and deleted speed AA.
- Corrected typo.
- Changed master format.
History
DDR SDRAM
Rev. 1.3 July. 2005
DDR SDRAM 256Mb E-die (x8)
1.0 Key Features
• VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
• VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe [DQS] (x4,x8)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• DM for write masking only (x4, x8)
• Auto & Self refresh
• 7.8us refresh interval(8K/64ms refresh)
• Maximum burst refresh cycle : 8
• 54pin sTSOP(II)-300
Leaded & Pb-Free(RoHS compliant)
package
DDR SDRAM
2.0 Ordering Information
Part No.
K4H560838E-N(V)C/LCC
K4H560838E-N(V)C/LB3
K4H560838E-N(V)C/LA2
K4H560838E-N(V)C/LB0
32M x 8
Org.
Max Freq.
CC(DDR400@CL=3)
B3(DDR333@CL=2.5)
A2(DDR266@CL=2)
B0(DDR266@CL=2.5)
SSTL2
54pin sTSOP II
Interface
Package
Note : Leaded and Lead-free(Pb-free) can be discriminated by PKG P/N (N : 54 sTSOP with Leaded, V : 54 sTSOP with Lead-free)
3.0 Operating Frequencies
CC(DDR400@CL=3)
Speed @CL2
Speed @CL2.5
Speed @CL3
CL-tRCD-tRP
-
166MHz
200MHz
3-3-3
B3(DDR333@CL=2.5)
133MHz
166MHz
-
2.5-3-3
A2(DDR266@CL=2.0)
133MHz
133MHz
-
2-3-3
B0(DDR266@CL=2.5)
100MHz
133MHz
-
2.5-3-3
Rev. 1.3 July. 2005
DDR SDRAM 256Mb E-die (x8)
4.0 Pin Description
DDR SDRAM
32Mb x 8
VDD
DQ0
VDDQ
DQ1
VSSQ
DQ2
VDDQ
DQ3
VSSQ
NC
VDDQ
NC
NC
VDD
WE
CAS
RAS
CS
NC
BA0
BA1
AP/A10
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
VSS
DQ7
VSSQ
DQ6
VDDQ
DQ5
VSSQ
DQ4
VDDQ
NC
VSSQ
DQS
VREF
VSS
DM
CK
CK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
VSS
54 PinsTSOP(II)
300mil x 551mil
(7.62mm x 14.00mm)
(0.5 mm Pin Pitch)
Bank Address
BA0-BA1
Row Address
A0-A12
Auto Precharge
A10
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
Organization
32Mx8
Row Address
A0~A12
Column Address
A0-A9
DM is internally loaded to match DQ and DQS identically.
Row & Column address configuration
Rev. 1.3 July. 2005
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