MT16HTF6464HY-667XX datasheet, PDF

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MT16HTF6464HY-667XX: DescriptionDDR DRAM Module, 64MX64, 0.45ns, CMOS, LEAD FREE, SODIMM-200; Categorystorage storage; File Size1MB，44 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/; Environmental Compliance

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MT16HTF6464HY-667XX Overview

DDR DRAM Module, 64MX64, 0.45ns, CMOS, LEAD FREE, SODIMM-200

MT16HTF6464HY-667XX Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Micron Technology
Parts packaging code	SODIMM
package instruction	DIMM,
Contacts	200
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	0.45 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-XZMA-N200
JESD-609 code	e4
memory density	4294967296 bit
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	200
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	64MX64
Package body material	UNSPECIFIED
encapsulated code	DIMM
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
self refresh	YES
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	NO
technology	CMOS
Temperature level	OTHER
Terminal surface	Gold (Au)
Terminal form	NO LEAD
Terminal location	ZIG-ZAG
Maximum time at peak reflow temperature	30

MT16HTF6464HY-667XX Preview

512MB, 1GB, 2GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM

Features

DDR2 SDRAM SODIMM

MT16HTF6464H – 512MB

MT16HTF12864H – 1GB

MT16HTF25664H – 2GB

For the latest data sheet, please refer to the Micron

Web site:

www.micron.com/products/modules

Features

• 200-pin, small outline, dual in-line memory module

(SODIMM)

• Fast data transfer rates: PC2-3200, PC2-4200, or

PC2-5300

• 512MB (64 Meg x 64), 1GB (128 Meg x 64)

2GB (256 Meg x 64)

• V

= V

Q = +1.8V

• V

DDSPD

= +1.7V to +3.6V

• JEDEC standard 1.8V I/O (SSTL_18-compatible)

• Differential data strobe (DQS, DQS#) option

• Four-bit prefetch architecture

• DLL to align DQ and DQS transitions with CK

• Multiple internal device banks for concurrent

operation

• Programmable CAS# latency (CL)

• Posted CAS# additive latency (AL)

• WRITE latency = READ latency - 1

• Programmable burst lengths: 4 or 8

• Adjustable data-output drive strength

• 64ms, 8,192-cycle refresh

• On-die termination (ODT)

• Serial Presence Detect (SPD) with EEPROM

• Gold edge contacts

• Dual rank

Figure 1:

200-pin SODIMM (MO-224 R/C “B”)

Height 1.18in. (29.97mm)

Options

• Package

200-pin SODIMM (lead-free)

• Frequency/CAS Latency

3ns @ CL = 5 (DDR2-667)

3.75ns @ CL = 4 (DDR2-533)

5.0ns @ CL = 3 (DDR2-400)

• PCB Height

1.18in. (29.97mm)

Marking

-667

-53E

-40E

Notes:1. CL = CAS (READ) Latency.

2. Contact Micron for product availability.

pdf: 09005aef80eec96e, source: 09005aef80eec946

HTF16C64_128_256x64HG_1.fm - Rev. A 6/05 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

512MB, 1GB, 2GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM

Features

Table 1:

Address Table

512MB

Refresh Count

Row Addressing

Device Bank Addressing

Device Page Size per Bank

Device Configuration

Column Addressing

Module Rank Addressing

8K (A0–A12)

4 (BA0, BA1)

1KB

256Mb (32 Meg x 8)

1K (A0–A9)

2 (S0#, S1#)

1GB

16K (A0–A13)

4 (BA0, BA1)

1KB

512Mb (64 Meg x 8)

1K (A0–A9)

2 (S0#, S1#)

2GB

16K (A0–A13)

8 (BA0, BA1, BA2)

1KB

1Gb (128 Meg x 8)

1K (A0–A9)

2 (S0#, S1#)

Table 2:

Key Timing Parameters

Data Rate (MT/s)

RCD

Speed Grade

-667

-53E

-40E

CL = 3

—

400

CL = 4

533

400

CL = 5

667

—

(ns)

Table 3:

Part Numbers and Timing Parameters

Module

Density

512MB

1GB

2GB

Configuration

64 Meg x 64

128 Meg x 64

256 Meg x 64

Module

Bandwidth

5.3 GB/s

4.3 GB/s

3.2 GB/s

5.3 GB/s

4.3 GB/s

3.2 GB/s

5.3 GB/s

4.3 GB/s

3.2 GB/s

Memory Clock/

Data Rate

3.0ns/667 MT/s

3.75ns/533 MT/s

5.0ns/400 MT/s

3.0ns/667 MT/s

3.75ns/533 MT/s

5.0ns/400 MT/s

3.0ns/667 MT/s

3.75ns/533 MT/s

5.0ns/400 MT/s

Latency

(CL -

RCD -

RP)

5-5-5

4-4-4

3-3-3

5-5-5

4-4-4

3-3-3

5-5-5

4-4-4

3-3-3

Part Number

MT16HTF6464HY-667__

MT16HTF6464HY-53E__

MT16HTF6464HY-40E__

MT16HTF12864HY-667__

MT16HTF12864HY-53E__

MT16HTF12864HY-40E__

MT16HTF25664HY-667__

MT16HTF25664HY-53E__

MT16HTF25664HY-40E__

Notes: 1. All part numbers end with a two-place code (not shown), designating component and PCB

revisions. Consult factory for current revision codes. Example: MT16HTF12864HY-40EC2.

pdf: 09005aef80eec96e, source: 09005aef80eec946

HTF16C64_128_256x64HG_1.fm - Rev. A 6/05 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

512MB, 1GB, 2GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM

Table of Contents

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

LIst of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4

List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

Module Pin Assignments and Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6

Functional Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

General Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

Serial Presence-Detect Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

Initialization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

Mode Register (MR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Burst Length . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Burst Type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Operating Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

DLL Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Write Recovery . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Power-Down Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

CAS Latency (CL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Extended Mode Register (EMR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

DLL Enable/Disable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Output Drive Strength. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18

DQS# Enable/Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19

RDQS Enable/Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19

Output Enable/Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19

On Die Termination (ODT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19

Off-Chip Driver (OCD) Impedance Calibration. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20

Posted CAS Additive Latency (AL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20

Extended Mode Register 2 (EMR2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21

Extended Mode Register 3 (EMR3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22

Command Truth Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23

Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24

DC Operating Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24

Input Electrical Characteristics and Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25

Specifications and Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25

7 Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26

Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26

AC Timing and Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30

Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34

Serial Presence-Detect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37

SPD Clock and Data Conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37

SPD Start Condition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37

SPD Stop Condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37

SPD Acknowledge. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37

Module Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43

Data Sheet Designation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44

pdf: 09005aef80eec96e, source: 09005aef80eec946

HTF16C64_128_256x64HGTOC.fm - Rev. A 6/05 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

512MB, 1GB, 2GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM

LIst of Figures

Figure 1:

Figure 2:

Figure 3:

Figure 4:

Figure 5:

Figure 6:

Figure 7:

Figure 8:

Figure 9:

Figure 10:

Figure 11:

Figure 12:

Figure 13:

Figure 14:

Figure 15:

Figure 16:

200-pin SODIMM (MO-224 R/C “B”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Pin Locations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6

Functional Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

DDR2 Power-Up and Initialization. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Mode Register (MR) Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

CAS Latency (CL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Extended Mode Register Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18

READ Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20

Write Latency. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20

Extended Mode Register 2 (EMR2) Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21

Extended Mode Register 3 (EMR3) Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22

Data Validity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37

Definition of Start and Stop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38

Acknowledge Response From Receiver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38

SPD EEPROM Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .39

200-pin DDR2 SODIMM Module Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43

pdf: 09005aef80eec96e, source: 09005aef80eec946

HTF16C64_128_256x64HGLOF.fm - Rev. A 6/05 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

512MB, 1GB, 2GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM

List of Tables

Table 1:

Table 2:

Table 3:

Table 4:

Table 5:

Table 6:

Table 7:

Table 8:

Table 9:

Table 10:

Table 11:

Table 12:

Table 13:

Table 14:

Table 15:

Table 16:

Table 17:

Table 18:

Table 19:

Table 20:

Table 21:

Table 22:

Table 23:

Address Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

Key Timing Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

Part Numbers and Timing Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6

Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

Burst Definition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Commands Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23

Absolute Maximum DC Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24

Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24

Input DC Logic Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25

Input AC Logic Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25

General I

Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25

7 Timing Patterns – 512MB and 1GB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26

7 Timing Patterns – 2GB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26

DDR2 I

Specifications and Conditions – 512MB. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27

DDR2 I

Specifications and Conditions – 1GB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28

DDR2 I

Specifications and Conditions – 2GB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29

AC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30

EEPROM Device Select Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .39

EEPROM Operating Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .39

Serial Presence-Detect EEPROM DC Operating Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40

Serial Presence-Detect EEPROM AC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40

Serial Presence-Detect Matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .41

pdf: 09005aef80eec96e, source: 09005aef80eec946

HTF16C64_128_256x64HGLOT.fm - Rev. A 6/05 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

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MT16HTF6464HY-667XX Related Products

	MT16HTF6464HY-667XX	MT16HTF6464HY-40EXX	MT16HTF6464HY-53EXX
Description	DDR DRAM Module, 64MX64, 0.45ns, CMOS, LEAD FREE, SODIMM-200	DDR DRAM Module, 64MX64, 0.6ns, CMOS, LEAD FREE, SODIMM-200	DDR DRAM Module, 64MX64, 0.5ns, CMOS, LEAD FREE, SODIMM-200
Is it lead-free?	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to
Maker	Micron Technology	Micron Technology	Micron Technology
Parts packaging code	SODIMM	SODIMM	SODIMM
package instruction	DIMM,	DIMM,	DIMM,
Contacts	200	200	200
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
access mode	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
Maximum access time	0.45 ns	0.6 ns	0.5 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-XZMA-N200	R-XZMA-N200	R-XZMA-N200
JESD-609 code	e4	e4	e4
memory density	4294967296 bit	4294967296 bit	4294967296 bit
Memory IC Type	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
memory width	64	64	64
Number of functions	1	1	1
Number of ports	1	1	1
Number of terminals	200	200	200
word count	67108864 words	67108864 words	67108864 words
character code	64000000	64000000	64000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C
organize	64MX64	64MX64	64MX64
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	260	260	260
Certification status	Not Qualified	Not Qualified	Not Qualified
self refresh	YES	YES	YES
Maximum supply voltage (Vsup)	1.9 V	1.9 V	1.9 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V
surface mount	NO	NO	NO
technology	CMOS	CMOS	CMOS
Temperature level	OTHER	OTHER	OTHER
Terminal surface	Gold (Au)	Gold (Au)	Gold (Au)
Terminal form	NO LEAD	NO LEAD	NO LEAD
Terminal location	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG
Maximum time at peak reflow temperature	30	30	30

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