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K7N801809B-QC200

Description
ZBT SRAM, 512KX18, 3.2ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
Categorystorage    storage   
File Size214KB,18 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K7N801809B-QC200 Overview

ZBT SRAM, 512KX18, 3.2ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

K7N801809B-QC200 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeQFP
package instructionLQFP,
Contacts100
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time3.2 ns
Other featuresPIPELINED ARCHITECTURE
JESD-30 codeR-PQFP-G100
length20 mm
memory density9437184 bit
Memory IC TypeZBT SRAM
memory width18
Number of functions1
Number of terminals100
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX18
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
width14 mm
K7N803609B
K7N803209B
K7N801809B
Document Title
256Kx36/x32 & 512Kx18 Pipelined NtRAM
TM
256Kx36 & 256Kx32 & 512Kx18-Bit Pipelined NtRAM
TM
Revision History
Rev. No.
0.0
0.1
0.2
1.0
History
1. Initial document.
1. Add x32 org part and industrial temperature part
1. change scan order(1) form 4T to 6T at 119BGA(x18)
1. Final spec release
2. Change I
SB2
form 50mA to 60mA
1. Remove tCYC 225MHz(-22)
1. Delete 119BGA package
Draft Date
May. 18. 2001
Aug. 11. 2001
Aug. 28. 2001
Nov. 16. 2001
Remark
Preliminary
Preliminary
Preliminary
Final
2.0
2.1
April. 01. 2002
April. 04. 2003
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
April 2003
Rev 2.1

K7N801809B-QC200 Related Products

K7N801809B-QC200 K7N803609B-QI200 K7N803209B-QI200 K7N803609B-QC200 K7N803209B-QC250 K7N803209B-QC200 K7N801809B-QI200 K7N803209B-QI250
Description ZBT SRAM, 512KX18, 3.2ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 ZBT SRAM, 256KX36, 3.2ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 ZBT SRAM, 256KX32, 3.2ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 ZBT SRAM, 256KX36, 3.2ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 ZBT SRAM, 256KX32, 2.6ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 ZBT SRAM, 256KX32, 3.2ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 ZBT SRAM, 512KX18, 3.2ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 ZBT SRAM, 256KX32, 2.6ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
Parts packaging code QFP QFP QFP QFP QFP QFP QFP QFP
package instruction LQFP, LQFP, LQFP, LQFP, LQFP, LQFP, LQFP, LQFP,
Contacts 100 100 100 100 100 100 100 100
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 3.2 ns 3.2 ns 3.2 ns 3.2 ns 2.6 ns 3.2 ns 3.2 ns 2.6 ns
Other features PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE
JESD-30 code R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100
length 20 mm 20 mm 20 mm 20 mm 20 mm 20 mm 20 mm 20 mm
memory density 9437184 bit 9437184 bit 8388608 bit 9437184 bit 8388608 bit 8388608 bit 9437184 bit 8388608 bit
Memory IC Type ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM
memory width 18 36 32 36 32 32 18 32
Number of functions 1 1 1 1 1 1 1 1
Number of terminals 100 100 100 100 100 100 100 100
word count 524288 words 262144 words 262144 words 262144 words 262144 words 262144 words 524288 words 262144 words
character code 512000 256000 256000 256000 256000 256000 512000 256000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 85 °C 85 °C 70 °C 70 °C 70 °C 85 °C 85 °C
organize 512KX18 256KX36 256KX32 256KX36 256KX32 256KX32 512KX18 256KX32
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LQFP LQFP LQFP LQFP LQFP LQFP LQFP LQFP
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm
Maximum supply voltage (Vsup) 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V
Minimum supply voltage (Vsup) 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL INDUSTRIAL INDUSTRIAL
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal pitch 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm
Terminal location QUAD QUAD QUAD QUAD QUAD QUAD QUAD QUAD
width 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm
Maker SAMSUNG SAMSUNG SAMSUNG SAMSUNG - SAMSUNG SAMSUNG SAMSUNG
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