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FLM1314-18F

Description
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, CASE IB, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size258KB,5 Pages
ManufacturerSUMITOMO
Websitehttps://global-sei.com/
Download Datasheet Parametric View All

FLM1314-18F Overview

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, CASE IB, 2 PIN

FLM1314-18F Parametric

Parameter NameAttribute value
MakerSUMITOMO
package instructionFLANGE MOUNT, R-CDFM-F2
Contacts2
Manufacturer packaging codeCASE IB
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage15 V
FET technologyJUNCTION
highest frequency bandKU BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Operating modeDEPLETION MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE

FLM1314-18F Preview

FLM1314-18F
X,Ku-Band Internally Matched FET
FEATURES
・High
Output Power: P1dB=42.5dBm(Typ.)
・High
Gain: G1dB=6.0dB(Typ.)
・High
PAE: add=27%(Typ.)
・Broad
Band: 13.75~14.5GHz
・Impedance
Matched Zin/Zout = 50
・Hermetically
Sealed Package
DESCRIPTION
The FLM1314-18F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50 system.
ABSOLUTE MAXIMUM RATINGS (Ca se Tempe ra ture Tc=25
o
C)
Ite m
Dr ain-Sour ce Voltage
Gate -Sour ce Voltage
Total Pow e r Dis s ipation
Stor age Te m pe rature
Channe l Te m pe ratur e
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Rating
15
-5
75
-65 to +150
175
Unit
V
V
W
o
C
o
C
RECOMMENDED OPERATING CONDITION (Case Te mperature Tc=25
o
C)
Ite m
DC Input Voltage
Forw ar d Gate Cur re nt
Re ve r s e Gate Cur re nt
Sym bol
V
DS
I
GF
I
GR
Condition
R
G
=25 ohm
R
G
=25 ohm
Lim it
10
44.6
-9.6
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Ca se Tempe ra ture Tc=25
o
C)
Ite m
Dr ain Cur re nt
Tr ans conductance
Pinch-off Voltage
Gate -Sour ce Bre ak dow n Voltage
Output Pow e r at 1dB G.C.P.
Pow e r Gain at 1dB G.C.P.
Dr ain Cur re nt
Pow e r -adde d Efficie ncy
Gain Flatne s s
3rd Orde r Inte rm odulation
Dis tortion
The r m al Re s is tance
Channe l Te m pe ratur e Ris e
Sym bol
I
DSS
g
m
V
p
V
GSO
P
1dB
G
1dB
I
dsr
N
add
G
IM
3
R
th
T
ch
Condition
V
DS
=5V , V
GS
=0V
V
DS
=5V , I
DS
=4.65A
V
DS
=5V , I
DS
=390mA
I
GS
=-390uA
V
DS
=10V
I
DS
DC=4.0A
f= 13.75
~
14.5 GHz
Zs=Z
L
=50 ohm
f=14.5 GHz
f =10MHz
2-tone Test
Pout=36.0dBm (S.C.L.)
Channel to Case
10V x I
dsr
X R
th
M in.
-
-
-0.5
-5.0
42.0
5.0
-
-
-
-25
-
-
Lim it
Typ.
9.3
6600
-1.5
-
42.5
6.0
5.0
27
-
-30
1.8
-
M ax.
14
-
-3.0
-
-
-
6.0
-
1.2
-
2.0
100
Unit
A
mS
V
V
dBm
dB
A
%
dB
dBc
o
C/W
o
C
CASE STYLE : IB
ESD
Clas s III
2000V
 
~
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5k )
G.C.P.: Gain Compres sion Point, S.C.L.: Single Carrier Lev el
Edition 1.1
May 2005
1
FLM1314-18F
X,Ku-Band Internally Matched FET
POWER DERATING CURVE
80
Total Power Dissipation [W]
OUTPUT POWER , POWER ADDED EFFICIENCY
v.s. INPUT POWER
Vds=10V IdsDC=4.0A
Freq=14.125GHz
44
43
Output Power (dBm)
100
90
Pout
41
40
39
38
37
36
35
34
28
70
60
50
PAE
40
40
30
20
10
0
20
0
0
50
100
150
200
Case Te mpe rature [
o
C]
30
32
34
36
38
40
Input Power (dBm)
OUTPUT POWER vs. FREQUENCY
Vds=10V, IdsDC=4.0A
44
42
Output Power [dBm]
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
-42
-44
-46
-48
-50
-52
30
31
32
33
IMD vs OUTPUT POWER
Vds=10V, IdsDC=4.0A
f1=14.50GHz, f2=14.51GHz
Intermodulation Distortion [dBc]
40
38
36
34
32
13.50
P1dB
27dBm
31dBm
35dBm
38dBm
IM3
IM5
13.75
14.00
14.25
14.50
14.75
34
35
36
37
38
Frequency [GHz]
Output Power (S.C.L.) [dBm]
2
Power Added Efficiency (%)
60
42
80
FLM1314-18F
X,Ku-Band Internally Matched FET
S-PARAMETERS
+50j
+25j
10
Ω
1 3 .7 5 GH z
+90°
+100j
+10j
1 3 .7 5 GHz
1 4 .1 2 5
1 4 .1 2 5
1 4 .5
+250j
Scale for |S
21
|
±180° 3
2
1 4 .5
1 4 .5
1 3 .7 5 G H z
0
1 4 .5
1 3 .7 5 G H z
1 4 .1 2 5
-10j
-250j
1 4 .1 2 5
-25j
-50j
-100j
S11
S22
0.2
-90°
Scale for |
S
12
|
S12
S21
V
DS
=10.0V , IDS=4.0A
FREQ.(GHz)
13.5
13.6
13.7
13.8
13.9
14.0
14.1
14.2
14.3
14.4
14.5
14.6
14.7
S11mag
0.462
0.394
0.328
0.255
0.189
0.130
0.099
0.115
0.158
0.209
0.254
0.308
0.360
S11ang
-154.1
-163.2
-173.9
172.6
156.0
129.2
85.1
38.8
8.7
-13.0
-30.8
-48.6
-66.5
S21mag
1.909
1.976
2.026
2.059
2.093
2.105
2.111
2.105
2.095
2.090
2.089
2.061
2.028
S21ang
51.8
30.0
7.7
-14.9
-37.5
-59.9
-82.7
-105.5
-128.4
-151.2
-174.2
161.8
137.5
S12mag
0.099
0.103
0.107
0.109
0.112
0.114
0.114
0.115
0.115
0.115
0.114
0.112
0.110
S12ang
41.8
21.9
1.5
-18.8
-39.3
-59.9
-80.4
-100.7
-121.2
-142.0
-162.8
176.1
154.2
S22mag
0.402
0.420
0.434
0.443
0.452
0.455
0.449
0.439
0.418
0.392
0.362
0.320
0.274
S22ang
115.1
101.9
89.3
77.7
67.7
58.0
50.5
44.0
38.0
34.0
29.6
29.6
31.7
3
FLM1314-18F
X,Ku-Band Internally Matched FET
Package Out Line
Case Style : IB
Unit : mm
PIN ASSIGNMENT
1 : GATE
2 : SOURCE
3 : DRAIN
4 : SOURCE
4
FLM1314-18F
X,Ku-Band Internally Matched FET
For further information please contact :
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
CAUTION
Eudyna Devices Compound Semiconductor Products contain
gallium
arsenide (GaAs)
which can be hazardous to the human body and the
environment.
For safety, observe the following procedures:
・Do
not put these products into the mouth.
・Do
not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products
are dangerous to the human body if inhaled, ingested, or swallowed.
・Observe
government laws and company regulations when discarding
this product. This product must be discarded in accordance with
methods specified by applicable hazardous waste procedures.
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte. Ltd. Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road, Tsim Sha Tsui Kowloon, Hong kong
Tel: +852-2377-0227
Fax: +852-2377-3921
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho, Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
Tel +81-55-275-4411
Fax +81-55-275-9461
Sales Division
1,Kanai-cho,Sakae-ku,Yokohama,244-0845,Japan
Tel +81-45-853-8156
Fax +81-45-853-8170
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