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SI4800,518

Description
SI4800
CategoryDiscrete semiconductor    The transistor   
File Size99KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

SI4800,518 Overview

SI4800

SI4800,518 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
MakerNXP
Parts packaging codeSOIC
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)9 A
Maximum drain-source on-resistance0.0185 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMS-012AA
JESD-30 codeR-PDSO-G8
JESD-609 codee4
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)40 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceNICKEL PALLADIUM GOLD
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
SI4800
N-channel TrenchMOS™ logic level FET
M3D315
Rev. 02 — 17 February 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s
Low gate charge
s
Low on-state resistance
s
Surface mounted package
s
Fast switching.
1.3 Applications
s
Portable appliances
s
Lithium-ion battery chargers
s
Notebook computers
s
DC-to-DC converters.
1.4 Quick reference data
s
V
DS
30 V
s
P
tot
2.5 W
s
I
D
9 A
s
R
DSon
18.5 mΩ
2. Pinning information
Table 1:
Pin
1,2,3
4
5,6,7,8
Pinning - SOT96-1 (SO-8), simplified outline and symbol
Description
source (s)
gate (g)
drain (d)
g
1
Top view
4
MBK187
Simplified outline
8
5
Symbol
d
MBB076
s
SOT96-1 (SO8)

SI4800,518 Related Products

SI4800,518 SI4800518 SI4800/T3
Description SI4800 MOSFET TAPE13 MOSFET TRANSISTOR 9 A, 30 V, 0.0185 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power
Configuration SINGLE WITH BUILT-IN DIODE Single Quad Drain Triple Source SINGLE WITH BUILT-IN DIODE
Maker NXP - NXP
Parts packaging code SOIC - SOIC
package instruction SMALL OUTLINE, R-PDSO-G8 - SMALL OUTLINE, R-PDSO-G8
Contacts 8 - 8
Reach Compliance Code unknown - unknown
ECCN code EAR99 - EAR99
Minimum drain-source breakdown voltage 30 V - 30 V
Maximum drain current (ID) 9 A - 9 A
Maximum drain-source on-resistance 0.0185 Ω - 0.0185 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code MS-012AA - MS-012AA
JESD-30 code R-PDSO-G8 - R-PDSO-G8
JESD-609 code e4 - e4
Number of components 1 - 1
Number of terminals 8 - 8
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Polarity/channel type N-CHANNEL - N-CHANNEL
Maximum pulsed drain current (IDM) 40 A - 40 A
Certification status Not Qualified - Not Qualified
surface mount YES - YES
Terminal surface NICKEL PALLADIUM GOLD - NICKEL PALLADIUM GOLD
Terminal form GULL WING - GULL WING
Terminal location DUAL - DUAL
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
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