FMMT4126 datasheet, PDF - EEWORLD Datasheet

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FMMT4126: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon; CategoryDiscrete semiconductor The transistor; File Size28KB，1 Pages; ManufacturerDiodes Incorporated

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FMMT4126 Overview

Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon

FMMT4126 Parametric

Parameter Name	Attribute value
Maker	Diodes Incorporated
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	60
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

FMMT4126 Preview

SOT23 PNP SILICON PLANAR

SWITCHING TRANSISTOR

ISSUE 2 MARCH 1995

PARTMARKING DETAIL

7

ZE

FMMT4126

E

C

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

SaturationVoltage

Static Forward

Current Transfer Ratio

Transistion Frequency

Output Capacitance

Input Capacitance

Noise Figure

Small Signal Current

Transfer

PARAMETER

Delay Time

Rise Time

Storage Time

Fall Time

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

h

FE

f

T

C

obo

C

ibo

N

h

fe

120

60

250

MIN.

-25

-4

-50

0.4

0.95

360

4.5

10

4

120

180

MHz

pF

dB

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

j

:T

stg

MAX.

UNIT

V

nA

V

VALUE

-25

-4

-200

330

-55 to +150

CONDITIONS.

I

C

=-10

µ

A

I

C

=-1mA*

I

E

=-10

µ

A

V

CB

=-20V

VEB=-3V

I

C

=-50mA, I

B

=-5mA*

IC=-50mA, I

B

=-5mA*

I

C

=-2mA, V

CE

=-1V*

I

C

=-50mA, V

CE

=-1V*

I

C

=-10mA, V

CE

=-20V, f=100MHz

V

CB

=-5V, I

E

=0, f=140KHz

V

BE

=-0.5V, I

E

=0, f=140KHz

I

C

=-200

µ

A, V

CE

=-5V, R

g

=-2k

Ω

f=30Hz to 15KHz at 3dB points

I

C

=-2mA, V

CE

=-1V, f=1KHz

UNIT

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

SWITCHING CHARACTERISTICS (at T

amb

= 25°C).

SYMBOL

t

d

t

r

t

s

t

f

TYP.

25

18

140

15

ns

UNIT

CONDITIONS

V

CC

=-3V, V

BE(off)

=-0.5V

I

C

=-10mA, I

B1

=-1mA

V

CC

=-3V, I

C

=-10mA

I

B1

=I

B2

=-1mA

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

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