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HYB3164805BT-40

Description
EDO DRAM, 8MX8, 40ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
Categorystorage    storage   
File Size303KB,29 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

HYB3164805BT-40 Overview

EDO DRAM, 8MX8, 40ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

HYB3164805BT-40 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Parts packaging codeTSOP2
package instruction0.400 INCH, PLASTIC, TSOP2-32
Contacts32
Reach Compliance Codenot_compliant
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time40 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G32
JESD-609 codee0
length20.95 mm
memory density67108864 bit
Memory IC TypeEDO DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals32
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP32,.46
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshNO
Maximum standby current0.001 A
Maximum slew rate0.1 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
8M x 8-Bit Dynamic RAM
(4k & 8k Refresh, EDO-version)
HYB 3164805BJ/BT(L) -40/-50/-60
HYB 3165805BJ/BT(L) -40/-50/-60
Premininary Information
8 388 608 words by 4-bit organization
0 to 70 °C operating temperature
Hyper Page Mode - EDO - operation
Performance:
-40
t
RAC
t
CAC
t
AA
t
RC
t
HPC
RAS access time
CAS access time
Access time from address
Read/write cycle time
Hyper page mode (EDO)
cycle time
40
10
20
69
16
-50
50
13
25
84
20
-60
60
15
30
104
25
ns
ns
ns
ns
ns
Single + 3.3 V (± 0.3V) power supply
Low power dissipation:
max. 306 active mW ( HYB 3164805BJ/BT(L)-40)
max. 252 active mW ( HYB 3164805BJ/BT(L)-50)
max. 216 active mW ( HYB 3164805BJ/BT(L)-60)
max. 486 active mW ( HYB 3165805BJ/BT(L)-40)
max. 396 active mW ( HYB 3165805BJ/BT(L)-50)
max. 324 active mW ( HYB 3165805BJ/BT(L)-60)
7.2 mW standby (LVTTL)
3.6 mW standby (LVMOS)
720
µA
standby for L-version
Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh
Self refresh (L-version only)
8192 refresh cycles/128 ms , 13 R/ 10C addresses (HYB 3164805BJ/BT)
4096 refresh cycles/ 64 ms , 12 R/ 11C addresses (HYB 3165805BJ/BT)
128 msec refresh period for L-versions
Plastic Package: P-SOJ-32-1
400 mil
HYB 3164(5)400BJ
P-TSOPII-32-1 400 mil
HYB 3164(5)400BT(L)
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