DPG30C200PC
HiPerFRED²
V
RRM
I
FAV
t
rr
=
= 2x
=
200 V
15 A
35 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG30C200PC
Backside: cathode
1
4
3
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
Package:
TO-263 (D2Pak)
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
© 2013 IXYS all rights reserved
DPG30C200PC
Fast Diode
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current, drain current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 150 °C
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
0.69
18
1.7
0.25
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
= 150 V f = 1 MHz
I
F
=
15 A; V
R
= 130 V
T
VJ
= 45°C
T
VJ
= 25°C
T
VJ
= 25 °C
T
VJ
= 125°C
T
VJ
= 25 °C
T
VJ
= 125°C
-di
F
/dt = 130 A/µs
20
3
6.5
35
55
90
240
V
mΩ
K/W
K/W
W
A
pF
A
A
ns
ns
min.
typ.
max.
200
200
1
0.08
1.26
1.51
1.01
1.29
15
Unit
V
V
µA
mA
V
V
V
V
A
max. non-repetitive reverse blocking voltage
V
R
= 200 V
V
R
= 200 V
I
F
=
I
F
=
I
F
=
I
F
=
15 A
30 A
15 A
30 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
I
RM
t
rr
average forward current
T
C
= 145°C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
reverse recovery time
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
© 2013 IXYS all rights reserved
DPG30C200PC
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
F
C
mounting force with clip
TO-263 (D2Pak)
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-55
-55
-55
typ.
max.
35
175
150
150
Unit
A
°C
°C
°C
g
N
2
20
60
Product Marking
XXXXXXXXX
Part number
D
P
G
30
C
200
PC
=
=
=
=
=
=
=
Diode
HiPerFRED
extreme fast
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-263AB (D2Pak) (2)
Part No.
Logo
Assembly Line
Date Code
Assembly Code
IXYS
Zyyww
000000
Ordering
Standard
Part Number
DPG30C200PC
Marking on Product
DPG30C200PC
Delivery Mode
Tape & Reel
Quantity
800
Code No.
506675
Similar Part
DPG30C200PB
DPG30C200HB
Package
TO-220AB (3)
TO-247AD (3)
Voltage class
200
200
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Fast
Diode
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
0.69
14.7
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
© 2013 IXYS all rights reserved
DPG30C200PC
Outlines TO-263 (D2Pak)
Dim.
W
E
L1
c2
A
Supplier
Option
D
A1
1 2 3
4
c
2x e
10.92
(0.430)
3x b2
mm (Inches)
2x b
E1
A
A1
A2
b
b2
c
c2
D
D1
D2
E
E1
e
e1
H
L
L1
W
9.02
(0.355)
Millimeter
min
max
4.06
4.83
typ. 0.10
2.41
0.51
0.99
1.14
1.40
0.40
0.74
1.14
1.40
8.38
9.40
8.00
8.89
2.5
9.65
10.41
6.22
8.50
2,54 BSC
4.28
14.61 15.88
1.78
2.79
1.02
1.68
typ.
0.040
0.02
Inches
min
max
0.160 0.190
typ. 0.004
0.095
0.020 0.039
0.045 0.055
0.016 0.029
0.045 0.055
0.330 0.370
0.315 0.350
0.098
0.380 0.410
0.245 0.335
0,100 BSC
0.169
0.575 0.625
0.070 0.110
0.040 0.066
typ.
0.002
0.0008
H
L2
L
D1
All dimensions conform with
and/or within JEDEC standard.
3.81
(0.150)
1.78
(0.07)
2.54 (0.100)
3.05
(0.120)
Recommended min. foot print
1
4
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
© 2013 IXYS all rights reserved
DPG30C200PC
Fast Diode
80
70
0.4
60
12
T
VJ
= 25°C
150°C
50
40
0.5
T
VJ
= 125°C
V
R
= 130 V
30 A
16
14
I
F
= 30 A
I
F
= 15 A
15 A
0.3
I
F
= 7.5 A
Q
rr
[μC]
0.2
I
F
[A]
I
RM
10
7.5 A
[A]
8
6
4
30
20
0.1
10
0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
0
100 200 300 400 500 600
2
0
0
T
VJ
= 125°C
V
R
= 130 V
100 200 300 400 500 600
V
F
[V]
Fig. 1 Forward current
I
F
versus V
F
1.4
1.2
60
1.0
0.8
70
-di
F
/dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Q
rr
versus -di
F
/dt
16
T
VJ
= 125°C
V
R
= 130 V
14
12
50
I
F
= 30 A
-di
F
/dt [A/μs]
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
400
T
VJ
= 125°C
I
F
= 15 A
V
R
= 130 V
300
K
f
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 140 160
Q
rr
I
RM
t
rr
V
FR
[V]
10
8
200
t
fr
[ns]
40
15 A
30
7.5 A
[ns]
6
4
2
V
FR
t
fr
100
20
0
100 200 300 400 500 600
0
0
0
100 200 300 400 500 600
T
VJ
[°C]
Fig. 4 Typ. dynamic parameters
Q
rr
, I
RM
versus T
VJ
16
14
12
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
1.8
1.6
1.4
-di
F
/dt [A/μs]
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
-di
F
/dt [A/μs]
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF /dt
E
rec
[μJ]
10
8
6
4
2
0
0
Z
thJC
1.2
[K/W]
1.0
0.8
T
VJ
= 125°C
V
R
= 130 V
100 200 300 400 500 600
0.6
1
10
100
1000
10000
-di
F
/dt [A/μs]
Fig. 7 Typ. recovery energy
E
rec
versus -di
F
/dt
IXYS reserves the right to change limits, conditions and dimensions.
t [ms]
Fig. 8 Transient thermal resistance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
© 2013 IXYS all rights reserved
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