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AUIRGP4066D1-E

Description
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size359KB,13 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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AUIRGP4066D1-E Overview

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

AUTOMOTIVE GRADE
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Low V
CE (ON)
Trench IGBT Technology
Low switching losses
Maximum Junction temperature 175 °C
5
μS
short circuit SOA
Square RBSOA
100% of the parts tested for 4X rated current (I
LM
Positive V
CE (ON)
Temperature Coefficient
Soft Recovery Co-Pak Diode
Tight parameter distribution
Lead-Free,
RoHS Compliant
Automotive Qualified *
E
C
G
C
G
E
C
AUIRGP4066D1
AUIRGP4066D1-E
V
CES
= 600V
I
C(Nominal)
= 75A
t
SC
5μs, T
J(max)
= 175°C
n-channel
C
V
CE(on)
typ. = 1.70V
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low V
CE (ON)
and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
G C
E
TO-247AC
AUIRGP4066D1
TO-247AD
AUIRGP4066D1-E
G
G ate
Standard Pack
Form
Tube
Tube
C
C ollector
E
Em itter
Complete Part Number
Ordering Information
Base part number
AUIRGP4066D1
AUIRGP4066D1-E
Package Type
TO-247AC
TO-247AD
Quantity
25
25
AUIRGP4066D1
AUIRGP4066D1-E
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated
conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and
still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
NOMINAL
I
CM
I
LM
I
F NOMINAL
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
ST G
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current V
GE
= 15V
Clamped Inductive Load Current V
GE
= 20V
Diode Nominal Current
Max.
600
140
90
75
225
300
75
300
±20
±30
454
227
-55 to +175
Units
V
g
d
c
Diode Maximum Forward Current
d
g
A
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.33
0.53
–––
–––
Units
°C/W
Thermal Resistance
R
θ
JC
(IGBT)
R
θ
JC
(Diode)
R
θ
CS
R
θ
JA
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
f
Thermal Resistance Junction-to-Case-(each Diode)
f
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
*Qualification
standards can be found at http://www.irf.com/
1
www.irf.com
©
2013 International Rectifier
May 02, 2013
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