LT2A01–LT2A07
Vishay Lite–On Power Semiconductor
2.0A Rectifier
Features
D
Diffused junction
D
High current capability and low
forward voltage drop
D
Surge overload rating to 70A peak
D
Plastic material – UL Recognition
flammability classification 94V–0
14 421
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Repetitive peak reverse voltage
g
=Working peak reverse voltage
=DC Bl ki voltage
DC Blocking lt
Test Conditions
Type
LT2A01
LT2A02
LT2A03
LT2A04
LT2A05
LT2A06
LT2A07
Symbol
V
RRM
=V
RWM
=V
R
V
Value
50
100
200
400
600
800
1000
70
2
–65...+150
Unit
V
V
V
V
V
V
V
A
A
°
C
Peak forward surge current
Average forward current
T
A
=55
°
C
Junction and storage temperature range
I
FSM
I
FAV
T
j
=T
stg
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Reverse current
I
2
t Rating for fusing
Diode capacitance
Thermal resistance junction to ambient
Test Conditions
I
F
=2A
T
A
=25
°
C
T
A
=100
°
C
V
R
=4V, f=1MHz
Type
Symbol
V
F
I
R
I
R
I
2
t
C
D
R
thJA
Min
Typ
Max
1.1
5
50
17.5
Unit
V
m
A
m
A
A
2
s
pF
K/W
15
60
Rev. A2, 24-Jun-98
1 (4)
LT2A01–LT2A07
Vishay Lite–On Power Semiconductor
Characteristics
(T
j
= 25
_
C unless otherwise specified)
I
FSM
– Peak Forward Surge Current ( A )
I
FAV
– Average Forward Current ( A )
2.5
2.0
75
60
45
1.5
1.0
30
0.5
0
Single phase half–wave
60 Hz resistive or inductive load
Load 9.5mm Lead Length
15
8.3 ms Single Half–Sine–Wave
JEDEC method
0
1
10
Number of Cycles at 60 Hz
100
25
15579
50
75
100
125 150 175
200
15581
T
amb
– Ambient Temperature (
°C
)
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
10
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
100
T
j
= 25°C
C
D
– Diode Capacitance ( pF )
I
F
– Forward Current ( A )
f = 1 MHz
1.0
10
0.1
0.01
0
15580
T
j
= 25°C
I
F
Pulse Width = 300
µs
0.8
1.6
0.4
1.2
V
F
– Forward Voltage ( V )
1.0
1.0
15582
10
V
R
– Reverse Voltage ( V )
100
Figure 2. Typ. Forward Current vs. Forward Voltage
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
2 (4)
Rev. A2, 24-Jun-98
LT2A01–LT2A07
Vishay Lite–On Power Semiconductor
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
4 (4)
Rev. A2, 24-Jun-98
Microcontroller MCU
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