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FESE8AT-E3/45

Description
Rectifier Diode, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, TO-220AC,
CategoryDiscrete semiconductor    diode   
File Size83KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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FESE8AT-E3/45 Overview

Rectifier Diode, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, TO-220AC,

FESE8AT-E3/45 Parametric

Parameter NameAttribute value
MakerVishay
package instructionR-PSFM-T2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW LEAKAGE CURRENT
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current125 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage50 V
Maximum reverse current10 µA
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE

FESE8AT-E3/45 Preview

FESE8xT
www.vishay.com
Vishay General Semiconductor
Ultrafast Plastic Rectifier
FEATURES
TO-220AC
• Power pack
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low leakage current
• High forward surge capability
2
1
• Solder dip 275 °C max., 10 s per JESD 22-B106
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
FESE8xT
PIN 1
PIN 2
CASE
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, inverters, freewheeling diodes, DC/DC converters,
and other power switching application.
8.0 A
50 V to 600 V
125 A
35 ns, 50 ns
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
Package
Diode variations
MECHANICAL DATA
Case:
TO-220AC
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs max.
per
0.95 V, 1.30 V, 1.50 V
150 °C
TO-220AC
Single die
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Max. repetitive
peak reverse voltage
Max. RMS voltage
Max. DC blocking voltage
Max. average forward
rectified current at T
C
= 100 °C
Peak forward surge current
8.3 ms single half sine-wave
superimposed on rated load
Operating storage and
temperature range
SYMBOL FESE8AT FESE8BT FESE8CT FESE8DT FESE8FT FESE8GT FESE8HT FESE8JT UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
50
35
50
100
70
100
150
105
150
200
140
200
8.0
125
-55 to +150
300
210
300
400
280
400
500
350
500
600
420
600
V
V
V
A
A
°C
Revision: 19-Sep-13
Document Number: 87916
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
FESE8xT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL FESE8AT FESE8BT FESE8CT FESE8DT FESE8FT FESE8GT FESE8HT FESE8JT UNIT
V
F
T
C
= 25 °C
T
C
= 100 °C
I
F
= 0.5 A, I
R
= 1.0
I
rr
= 0.25 A
4.0 V, 1 MHz
I
R
t
rr
C
J
35
85
0.95
10
500
50
50
μA
ns
pF
1.3
1.5
V
Max. instantaneous
8.0 A
forward voltage
(1)
Max. DC reverse
current at rated DC
blocking voltage
Max. reverse
recovery time
Typical junction
capacitance
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
from junction to case
SYMBOL
R
JC
FESE8AT FESE8BT FESE8CT FESE8DT FESE8FT FESE8GT FESE8HT FESE8JT UNIT
2.2
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AC
PREFERRED P/N
FESE8JT-E3/45
UNIT WEIGHT (g)
1.80
PACKAGE CODE
45
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
10
150
Average Forward Rectified Current (A)
Peak Forward Surge Current (A)
Resistive or Inductive Load
8
Heatsink, Case Temperature, T
C
6
Free Air, Ambient Temperature, T
A
125
T
C
= 100 °C
8.3 ms Single Half Sine-Wave
100
75
4
50
2
25
0
0
50
100
150
0
1
10
100
Temperature (°C)
Number
of Cycles at 60 Hz
Fig. 1 - Max. Forward Current Derating Curve
Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current
Revision: 19-Sep-13
Document Number: 87916
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
FESE8xT
www.vishay.com
Vishay General Semiconductor
1000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
100
Instantaneous Forward Current (A)
Pulse Width = 300 µs
1 % Duty Cycle
T
J
= 125 °C
10
T
J
= 25 °C
Junction Capacitance (pF)
100
1
50 - 200 V
300 - 400 V
500 - 600 V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
50 - 200 V
500 - 600 V
10
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
Instantaneous Reverse Leakage
Current (µA)
T
J
= 125 °C
10
1
T
J
= 100 °C
50 - 200 V
500 - 600 V
0.1
T
J
= 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AC
0.415 (10.54) MAX.
0.159 (4.04) DIA.
0.143 (3.64) DIA.
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.260 (6.6)
0.236 (6.0)
0.603 (15.32)
0.573 (14.55)
1
2
0.160 (4.06)
0.140 (3.56)
0.060 (1.50)
0.047 (1.20)
0.560 (14.22)
0.530 (13.46)
0.040 (0.84)
0.024 (0.62)
0.20 (5.08)
PIN 1
PIN 2
CASE
0.022 (0.56)
0.014 (0.36)
Revision: 19-Sep-13
Document Number: 87916
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000

FESE8AT-E3/45 Related Products

FESE8AT-E3/45 FESE8CT-E3/45 FESE8BT-E3/45
Description Rectifier Diode, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, TO-220AC, Rectifier Diode, 1 Phase, 1 Element, 8A, 150V V(RRM), Silicon, TO-220AC, Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-220AC,
Maker Vishay Vishay Vishay
package instruction R-PSFM-T2 R-PSFM-T2 R-PSFM-T2
Reach Compliance Code unknown unknown unknow
ECCN code EAR99 EAR99 EAR99
Other features FREE WHEELING DIODE, LOW LEAKAGE CURRENT FREE WHEELING DIODE, LOW LEAKAGE CURRENT FREE WHEELING DIODE, LOW LEAKAGE CURRENT
application EFFICIENCY EFFICIENCY EFFICIENCY
Shell connection CATHODE CATHODE CATHODE
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.95 V 0.95 V 0.95 V
JEDEC-95 code TO-220AC TO-220AC TO-220AC
JESD-30 code R-PSFM-T2 R-PSFM-T2 R-PSFM-T2
Maximum non-repetitive peak forward current 125 A 125 A 125 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Maximum output current 8 A 8 A 8 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Maximum repetitive peak reverse voltage 50 V 150 V 100 V
Maximum reverse current 10 µA 10 µA 10 µA
Maximum reverse recovery time 0.035 µs 0.035 µs 0.035 µs
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE

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