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BSN3005

Description
TRANSISTOR 700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size87KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BSN3005 Overview

TRANSISTOR 700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal

BSN3005 Parametric

Parameter NameAttribute value
MakerNXP
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)0.7 A
Maximum drain-source on-resistance0.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.52 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
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