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MR16R1622DF0-CK8

Description
Rambus DRAM Module, 32MX16, 45ns, CMOS, RIMM-184
Categorystorage    storage   
File Size442KB,16 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

MR16R1622DF0-CK8 Overview

Rambus DRAM Module, 32MX16, 45ns, CMOS, RIMM-184

MR16R1622DF0-CK8 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeDMA
package instructionDIMM, DIMM184,40
Contacts184
Reach Compliance Codeunknown
ECCN codeEAR99
access modeBLOCK ORIENTED PROTOCOL
Maximum access time45 ns
Other featuresSELF CONTAINED REFRESH
Maximum clock frequency (fCLK)800 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N184
memory density536870912 bit
Memory IC TypeRAMBUS DRAM MODULE
memory width16
Humidity sensitivity level1
Number of functions1
Number of ports1
Number of terminals184
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
organize32MX16
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM184,40
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)225
power supply1.8/2.5,2.5 V
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)2.63 V
Minimum supply voltage (Vsup)2.37 V
Nominal supply voltage (Vsup)2.5 V
surface mountNO
technologyCMOS
Terminal formNO LEAD
Terminal pitch1 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
MR16R1622(4/8/G)DF0
MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy.
* Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIMM
Module Datasheet
Page 0
Version 1.0 July 2002
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