CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C827D3
Issued Date : 2012.04.09
Revised Date :
Page No. : 1/7
BTN13003D3
Features
•
High breakdown voltage, V
CEO
=450V (min.)
•
High collector current, I
C(max)
=1.5A (DC)
•
Pb-free package
Symbol
BTN13003D3
Outline
TO-126ML
B：Base
C：Collector
E：Emitter
E C B
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)
Base Current
Power Dissipation(T
A
=25℃)
Power Dissipation(T
C
=25℃)
Junction Temperature
Storage Temperature
Note : Single pulse, Pw≤300μs, Duty Cycle≤2%
.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
Pd
Limits
700
450
9
1.5
3
(Note )
0.2
1.5
20
Unit
V
V
V
A
A
A
W
W
Tj
Tstg
150
-55~+150
°C
°C
BTN13003D3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
*V
CE(SAT)
*V
CE(SAT)
*V
CE(SAT)
*V
BE(SAT)
*V
BE(SAT)
*h
FE
1
*h
FE
2
f
T
t
stg
t
f
Min.
700
450
9
-
-
-
-
-
-
-
-
18
5
5
-
1.8
Typ.
-
-
-
-
-
-
136
256
400
0.84
0.92
-
-
-
-
-
Max.
-
-
-
1
50
100
300
600
800
1
1.2
36
21
-
0.5
6.6
Unit
V
V
V
μA
μA
nA
mV
mV
V
V
V
-
-
MHz
μs
Spec. No. : C827D3
Issued Date : 2012.04.09
Revised Date :
Page No. : 2/7
Test Conditions
I
C
=100μA
I
C
=10mA
I
E
=100μA
V
CB
=700V, I
E
=0
V
CE
=400V, I
E
=0
V
EB
=9V, I
C
=0
I
C
=500mA, I
B
=100mA
I
C
=1A, I
B
=250mA
I
C
=1.5A, I
B
=500mA
I
C
=500mA, I
B
=100mA
I
C
=1A, I
B
=250mA
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=1A
V
CE
=10V, I
C
=100mA, f=100MHz
V
CC
=100V, I
C
=1A, I
B
1=-I
B
2=0.2A,
I
C
=0.25A
*Pulse Test: Pulse Width
≤380μs,
Duty Cycle≤2%
Ordering Information
Device
MJE13003D3
Package
TO-126ML
(Pb-free)
Shipping
200 pcs / Bag, 15 Bags/Box, 10 Boxes/Carton
Marking
13003
BTN13003D3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Emitter Grounded Output Characteristics
0.1
0.09
Collector Current---IC(A)
Collector Current---IC(A)
1mA
Spec. No. : C827D3
Issued Date : 2012.04.09
Revised Date :
Page No. : 3/7
Emitter Grounded Output Characteristics
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
35mA
20mA
15mA
10mA
IB=5mA
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
500uA
400uA
300uA
200uA
IB=100uA
0
6
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
Current Gain vs Collector Current
1000
1000
125℃
75℃
25℃
Current Gain vs Collector Current
Current Gain---HFE
Current Gain---HFE
100
125℃
75℃
25℃
100
10
10
VCE=2V
VCE=1V
1
1
10
100
1000
Collector Current---IC(mA)
10000
1
1
10
100
1000
Collector Current---IC(mA)
10000
Current Gain vs Collector Current
1000
1000
Saturation Voltage vs Collector Current
VCESAT@IC=3IB
100
25℃
75℃
125℃
Saturation Voltage---(mV)
Current Gain---HFE
100
125℃
75℃
25℃
10
VCE=5V
1
10
100
1000
Collector Current---IC(mA)
10000
10
1
10
100
1000
Collector Current---IC(mA)
10000
BTN13003D3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Saturation Voltage vs Collector Current
10000
VCESAT@IC=4IB
Saturation Voltage---(mV)
10000
VCESAT@IC=5IB
Spec. No. : C827D3
Issued Date : 2012.04.09
Revised Date :
Page No. : 4/7
Saturation Voltage vs Collector Current
Saturation Voltage---(mV)
1000
1000
100
125℃
75℃
25℃
100
125℃
75℃
25℃
10
10
1
10
100
1000
Collector Current---IC(mA)
10000
1
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
10000
VBESAT@IC=3IB
Saturation Voltage vs Collector Current
10000
VBESAT@IC=5IB
Saturation Voltage---(mV)
Saturation Voltage---(mV)
1000
25℃
75℃
125℃
1000
25℃
75℃
125℃
100
1
10
100
1000
Collector Current---IC(mA)
10000
100
1
10
100
1000
Collector Current---IC(mA)
10000
On Voltage vs Collector Current
10000
VCE=2V
Capacitance vs Reverse-biased Voltage
1000
Cib
Capacitance---(pF)
On Voltage---(mV)
100
1000
25℃
75℃
125℃
10
Cob
100
1
10
100
1000
Collector Current---IC(mA)
10000
1
0.1
1
10
Reverse-biased Voltage---VR(V)
100
BTN13003D3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Power Derating Curve
1.6
1.4
Power Dissipation---PD(W)
1.2
1
0.8
0.6
0.4
0.2
0
0
50
100
150
Ambient Temperature---TA(℃)
200
0
0
Power Dissipation---PD(W)
20
15
10
5
25
Spec. No. : C827D3
Issued Date : 2012.04.09
Revised Date :
Page No. : 5/7
Power Derating Curve
50
100
150
Case Temperature---TC(℃)
200
BTN13003D3
CYStek Product Specification
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