IRF6611TR1 datasheet, PDF - EEWORLD Datasheet

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IRF6611TR1: DescriptionRoHS compliant containing no lead or bromide; CategoryDiscrete semiconductor The transistor; File Size246KB，10 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRF6611TR1 Overview

RoHS compliant containing no lead or bromide

IRF6611TR1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
package instruction	SMALL OUTLINE, R-XDSO-G2
Contacts	2
Reach Compliance Code	unknow
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	210 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	32 A
Maximum drain current (ID)	27 A
Maximum drain-source on-resistance	0.0026 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XDSO-G2
JESD-609 code	e4
Humidity sensitivity level	3
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	89 W
Maximum pulsed drain current (IDM)	220 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Silver/Nickel (Ag/Ni)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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PD - 96978E

IRF6611

DirectFET Power MOSFET

RoHS compliant containing no lead or bromide

DSS

DS(on)

Low Profile (<0.7 mm)

30V max ±20V max 2.0mΩ@ 10V 2.6mΩ@ 4.5V

Dual Sided Cooling Compatible

g tot

gs2

oss

gs(th)

Ultra Low Package Inductance

Optimized for High Frequency Switching above 1MHz

37nC

12nC

3.3nC

16nC

23nC

1.7V

Ideal for CPU Core DC-DC Converters

Optimized for SyncFET Socket of Sync. Buck Converter

Low Conduction Losses

Compatible with Existing Surface Mount Techniques

DirectFET ISOMETRIC

Typical values (unless otherwise specified)

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Description

The IRF6611 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFET

packaging to achieve the lowest

on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing

layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,

when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided

cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6611 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching

losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors

operating at higher frequencies. The IRF6611 has been optimized for parameters that are critical in synchronous buck operating from 12 volt

bus converters including R

DS(on)

, gate charge and Cdv/dt-induced turn on immunity. The IRF6611 offers particularly low R

DS(on)

and high Cdv/

dt immunity for synchronous FET applications.

Absolute Maximum Ratings

@ T

= 25°C

@ T

= 70°C

@ T

= 25°C

Typical RDS(on) (m

Ω)

Parameter

Max.

Units

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

Ãe

VGS, Gate-to-Source Voltage (V)

±20

150

220

310

6.0

5.0

4.0

3.0

2.0

1.0

0.0

ID= 22A

VDS= 24V

VDS= 15V

ID = 27A

T J = 25°C

T J = 125°C

VGS, Gate -to -Source Voltage (V)

Fig 1.

Typical On-Resistance vs. Gate Voltage

Notes:

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET MOSFETs.

Repetitive rating; pulse width limited by max. junction temperature.

QG Total Gate Charge (nC)

Fig 2.

Typical On-Resistance vs. Gate Voltage

Starting T

= 25°C, L = 0.91mH, R

= 25Ω, I

= 22A.

Surface mounted on 1 in. square Cu board, steady state.

measured with thermocouple mounted to top (Drain) of part.

www.irf.com

11/17/05

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