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MPSW51RLRA

Description
1000mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size99KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

MPSW51RLRA Overview

1000mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN

MPSW51RLRA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-92
package instructionPLASTIC, TO-226AE, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
MPSW51, MPSW51A
One Watt High Current
Transistors
PNP Silicon
Features
http://onsemi.com
COLLECTOR
3
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
MPSW51
MPSW51A
MPSW51
MPSW51A
Symbol
V
CEO
Value
−30
−40
−40
−50
−5.0
−1000
1.0
8.0
2.5
20
−55
to +150
Unit
Vdc
2
BASE
1
EMITTER
Collector
−Base
Voltage
V
CBO
Vdc
Emitter
−Base
Voltage
Collector Current
Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
12
1
2
TO−92 1 WATT
(TO−226)
CASE 29−10
STYLE 1
3
STRAIGHT LEAD
3
BENT LEAD
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
125
50
Unit
°C/W
°C/W
MPS
W51x
AYWW
G
G
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
x
= 51A Devices
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
June, 2013
Rev. 5
1
Publication Order Number:
MPSW51/D
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