HY5RS123235BFP-2 datasheet, PDF

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HY5RS123235BFP-2: DescriptionDDR DRAM, 16MX32, 0.35ns, CMOS, PBGA136, 11 X 14 MM, ROHS COMPLIANT, FBGA-136; Categorystorage storage; File Size1MB，67 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/; Environmental Compliance

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HY5RS123235BFP-2 Overview

DDR DRAM, 16MX32, 0.35ns, CMOS, PBGA136, 11 X 14 MM, ROHS COMPLIANT, FBGA-136

HY5RS123235BFP-2 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SK Hynix
Parts packaging code	BGA
package instruction	TFBGA, BGA136,12X17,32
Contacts	136
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	MULTI BANK PAGE BURST
Maximum access time	0.35 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	500 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B136
JESD-609 code	e1
length	14 mm
memory density	536870912 bit
Memory IC Type	DDR DRAM
memory width	32
Number of functions	1
Number of ports	1
Number of terminals	136
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	16MX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA136,12X17,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum standby current	0.08 A
Maximum slew rate	0.655 mA
Maximum supply voltage (Vsup)	2.15 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	20
width	11 mm

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HY5RS123235BFP

512Mbit (16Mx32) GDDR3 SDRAM

HY5RS123235BFP

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 1.5/ Mar. 2008

HY5RS123235BFP-2 Related Products

	HY5RS123235BFP-2	HY5RS123235BFP-11	HY5RS123235BFP-14	HY5RS123235BFP-14L	HY5RS123235BFP-1	HY5RS123235BFP-18L	HY5RS123235BFP-08
Description	DDR DRAM, 16MX32, 0.35ns, CMOS, PBGA136, 11 X 14 MM, ROHS COMPLIANT, FBGA-136	DDR DRAM, 16MX32, 0.22ns, CMOS, PBGA136, 11 X 14 MM, ROHS COMPLIANT, FBGA-136	DDR DRAM, 16MX32, 0.26ns, CMOS, PBGA136, 11 X 14 MM, ROHS COMPLIANT, FBGA-136	DDR DRAM, 16MX32, CMOS, PDSO136, 11 X 14 MM, ROHS COMPLIANT, FBGA-136	DDR DRAM, 16MX32, 0.2ns, CMOS, PBGA136, 11 X 14 MM, ROHS COMPLIANT, FBGA-136	DDR DRAM, 16MX32, CMOS, PDSO136, 11 X 14 MM, ROHS COMPLIANT, FBGA-136	DDR DRAM, 16MX32, CMOS, PDSO136, 11 X 14 MM, ROHS COMPLIANT, FBGA-136
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	TFBGA, BGA136,12X17,32	TFBGA, BGA136,12X17,32	TFBGA, BGA136,12X17,32	TFBGA, BGA136,12X17,32	TFBGA, BGA136,12X17,32	TFBGA, BGA136,12X17,32	TFBGA, BGA136,12X17,32
Contacts	136	136	136	136	136	136	136
Reach Compliance Code	compliant	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	500 MHz	900 MHz	700 MHz	700 MHz	1000 MHz	550 MHz	1200 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	4,8	4,8	4,8	4,8	4,8	4,8	4,8
JESD-30 code	R-PBGA-B136	R-PBGA-B136	R-PBGA-B136	R-PDSO-G66	R-PBGA-B136	R-PDSO-G66	R-PDSO-G66
JESD-609 code	e1	e1	e1	e1	e1	e1	e1
length	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm
memory density	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	32	32	32	32	32	32	32
Number of functions	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1
Number of terminals	136	136	136	136	136	136	136
word count	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words
character code	16000000	16000000	16000000	16000000	16000000	16000000	16000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
organize	16MX32	16MX32	16MX32	16MX32	16MX32	16MX32	16MX32
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA
Encapsulate equivalent code	BGA136,12X17,32	BGA136,12X17,32	BGA136,12X17,32	BGA136,12X17,32	BGA136,12X17,32	BGA136,12X17,32	BGA136,12X17,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260	260
power supply	1.8 V	1.8 V	1.8 V	1.5 V	2 V	1.5 V	2 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	8192	8192
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES	YES	YES	YES	YES
Continuous burst length	4,8	4,8	4,8	4,8	4,8	4,8	4,8
Maximum standby current	0.08 A	0.14 A	0.09 A	0.05 A	0.16 A	0.04 A	0.18 A
Maximum slew rate	0.655 mA	1.18 mA	0.83 mA	0.5 mA	1.3 mA	0.46 mA	1.42 mA
Maximum supply voltage (Vsup)	2.15 V	2.15 V	2.15 V	1.545 V	2.15 V	1.545 V	2.15 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.7 V	1.455 V	1.95 V	1.455 V	1.95 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.5 V	2.05 V	1.5 V	2.05 V
surface mount	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	DUAL	BOTTOM	DUAL	DUAL
Maximum time at peak reflow temperature	20	20	20	20	20	20	20
width	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm
Maximum access time	0.35 ns	0.22 ns	0.26 ns	-	0.2 ns	-	-

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