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DPED8MX32RY5-80C

Description
EDO DRAM Module, 8MX32, 80ns, CMOS
Categorystorage    storage   
File Size656KB,2 Pages
ManufacturerB&B Electronics Manufacturing Company
Download Datasheet Parametric Compare View All

DPED8MX32RY5-80C Overview

EDO DRAM Module, 8MX32, 80ns, CMOS

DPED8MX32RY5-80C Parametric

Parameter NameAttribute value
MakerB&B Electronics Manufacturing Company
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time80 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 codeR-XQMA-N66
memory density268435456 bit
Memory IC TypeEDO DRAM MODULE
memory width32
Number of functions1
Number of ports1
Number of terminals66
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX32
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Certification statusNot Qualified
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal locationQUAD
2Mx32, 50 - 80ns, TSTACK
30A165-15
A
256 Megabit CMOS DRAM
DPnnD8MX32RY5
PRELIMINARY
DESCRIPTION:
The DPnnD8MX32RY5 is the 8 Meg x 32 Dynamic RAM
module that utilize the new and innovative space saving TSOP
stacking technology. The module is constructed of four 4 Meg
x 16 Dynamic RAM’s that are configured as 2 banks of 4 Meg x
32.
The DPnnD8MX32RY5 provides for a compatible upgrade path
to lower density compatible modules. The module features high
speed access times, common data inputs and outputs, and three
standard refresh modes.
FEATURES:
Access Times: 60, 70, 80ns (max.)
5.0V or 3.3V Supply
Common Data Inputs and Outputs
EDO or Fast Page Mode Capability
4096 Cycles / 64 ms
3 Variations of Refresh: - RAS only Refresh
- CAS before RAS Refresh
- Hidden Refresh
Package: TSOP Leadless Stack
PIN-OUT DIAGRAM
PIN NAMES
A0 - A11
DQ0 - DQ31
UCAS
LCAS
RAS0 - RAS1
WE0 - WE1
OE0 - OE1
V
DD
V
SS
N.C.
Row Address:
A0 - A11
Column Address: A0 - A9
Refresh Address: A0 - A11
Data In / Data Out
Upper Column Addres Strobe
Lower Column Addres Stobe
Row Address Enables
Data Write Enables
Data Output Enables
Power Supply (+5V)
Ground
No Connect
FUNCTIONAL BLOCK DIAGRAM
NOTE:
Pin 43 and Pin 46 are connected together,
Pin 42 and Pin 45 are connected together.
30A165-15
REV. A
NOTE:
LCAS controls DQ0-DQ15, UCAS controlls DQ16-DQ31.
This document contains information on a product presently under
development at Dense-Pac Microsystems, Inc. Dense-Pac reserves the
right to change products or specifications herein without prior notice.
1

DPED8MX32RY5-80C Related Products

DPED8MX32RY5-80C DPD8MX32RY5-70C DP3D8MX32RY5-70C DPD8MX32RY5-80C DP3ED8MX32RY5-80C DP3ED8MX32RY5-70C DPED8MX32RY5-70C DP3D8MX32RY5-80C
Description EDO DRAM Module, 8MX32, 80ns, CMOS Fast Page DRAM Module, 8MX32, 70ns, CMOS Fast Page DRAM Module, 8MX32, 70ns, CMOS Fast Page DRAM Module, 8MX32, 80ns, CMOS EDO DRAM Module, 8MX32, 80ns, CMOS EDO DRAM Module, 8MX32, 70ns, CMOS EDO DRAM Module, 8MX32, 70ns, CMOS Fast Page DRAM Module, 8MX32, 80ns, CMOS
Maker B&B Electronics Manufacturing Company B&B Electronics Manufacturing Company B&B Electronics Manufacturing Company B&B Electronics Manufacturing Company B&B Electronics Manufacturing Company B&B Electronics Manufacturing Company B&B Electronics Manufacturing Company B&B Electronics Manufacturing Company
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode FAST PAGE WITH EDO FAST PAGE FAST PAGE FAST PAGE FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE
Maximum access time 80 ns 70 ns 70 ns 80 ns 80 ns 70 ns 70 ns 80 ns
Other features RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 code R-XQMA-N66 R-XQMA-N66 R-XQMA-N66 R-XQMA-N66 R-XQMA-N66 R-XQMA-N66 R-XQMA-N66 R-XQMA-N66
memory density 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit
Memory IC Type EDO DRAM MODULE FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE EDO DRAM MODULE EDO DRAM MODULE EDO DRAM MODULE FAST PAGE DRAM MODULE
memory width 32 32 32 32 32 32 32 32
Number of functions 1 1 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1 1 1
Number of terminals 66 66 66 66 66 66 66 66
word count 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words
character code 8000000 8000000 8000000 8000000 8000000 8000000 8000000 8000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 8MX32 8MX32 8MX32 8MX32 8MX32 8MX32 8MX32 8MX32
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Nominal supply voltage (Vsup) 5 V 5 V 3.3 V 5 V 3.3 V 3.3 V 5 V 3.3 V
surface mount YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location QUAD QUAD QUAD QUAD QUAD QUAD QUAD QUAD
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