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M27V800-120F1

Description
512KX16 UVPROM, 120ns, CDIP42, FRIT SEALED, WINDOWED, CERAMIC, DIP-42
Categorystorage    storage   
File Size111KB,16 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

M27V800-120F1 Overview

512KX16 UVPROM, 120ns, CDIP42, FRIT SEALED, WINDOWED, CERAMIC, DIP-42

M27V800-120F1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeDIP
package instructionFRIT SEALED, WINDOWED, CERAMIC, DIP-42
Contacts42
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum access time120 ns
Spare memory width8
I/O typeCOMMON
JESD-30 codeR-GDIP-T42
JESD-609 codee0
length54.635 mm
memory density8388608 bit
Memory IC TypeUVPROM
memory width16
Number of functions1
Number of terminals42
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX16
Output characteristics3-STATE
Package body materialCERAMIC, GLASS-SEALED
encapsulated codeWDIP
Encapsulate equivalent codeDIP42,.6
Package shapeRECTANGULAR
Package formIN-LINE, WINDOW
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
Maximum seat height5.72 mm
Maximum standby current0.00002 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)3.63 V
Minimum supply voltage (Vsup)2.97 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width15.24 mm
M27V800
8 Mbit (1Mb x 8 or 512Kb x 16)
Low Voltage UV EPROM and OTP EPROM
NOT FOR NEW DESIGN
s
s
M27V800 is replaced by the M27W800
3V to 3.6V LOW VOLTAGE in READ
OPERATION
ACCESS TIME: 100ns
BYTE-WIDE or WORD-WIDE
CONFIGURABLE
8 Mbit MASK ROM REPLACEMENT
LOW POWER CONSUMPTION
– Active Current 30mA at 8MHz
– Standby Current 20µA
42
42
s
s
1
1
s
s
FDIP42W (F)
PDIP42 (B)
s
s
s
PROGRAMMING VOLTAGE: 12.5V
±
0.25V
PROGRAMMING TIME: 100µs/word
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: B2h
PLCC44 (K)
44
1
SO44 (M)
DESCRIPTION
The M27V800 is a low voltage 8 Mbit EPROM of-
fered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessor systems requiring large data or
program storage. It is organised as either 1 Mbit
words of 8 bit or 512 Kbit words of 16 bit. The pin-
out is compatible with a 8 Mbit Mask ROM.
The M27V800 operates in the read mode with a
supply voltage as low as 3V. The decrease in op-
erating power allows either a reduction of the size
of the battery or an increase in the time between
battery recharges.
The FDIP42W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written rapidly to
the device by following the programming proce-
dure.
For applications where the content is programmed
only one time and erasure is not required, the
M27V800 is offered in PDIP42, SO44 and
PLCC44 package.
Figure 1. Logic Diagram
VCC
19
A0-A18
15
Q15A–1
Q0-Q14
E
G
BYTEVPP
M27V800
VSS
AI01851
July 2000
This is information on a product still in production but not recommended for new designs.
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