CREAT BY ART
1.5 Watts Surface Mount Silicon Zener Diodes
SMA/DO-214AC
Features
For surface mounted applications in order
to optimize board space
Low profile package
Built-in strain relief
Glass passivated junction
Low inductance
Typical IR less than 0.5uA above 11V
High temperature soldering guaranteed:
260℃ / 10 seconds at terminals
Plastic package has Underwriters
Laboratory Flammability Classification 94V-0
Green compound with suffix "G" on packing
code & prefix "G" on datecode
ESD Rating of Class 3B(HBM) per JEDEC.
1SMA5926 - 1SMA5956
Mechanical Data
Case: Molded plastic over passivated junction
Terminals: Pure tin plated, lead free,
solderable per MIL-STD-750, method 2026
Polarity: Color Band denotes positive end (cathode)
Standard packaging: 12mm tape (EIA-481)
Weight: 0.064 gram
Ordering Information (example)
Part No.
1SMA5926
Package
SMA
Packing
1.8K / 7" REEL
Packing code
R3
Packing code
(Green)
R3G
Maximum Ratings and Electrical Characteristics
Rating at 25
℃
ambient temperature unless otherwise specified.
Parameter
DC Power Dissipation at TL=75℃, measure at
Zero Lead Length (Note 1) Derate above 75℃
Peak Forward Surge Current, 8.3ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method)
Operating and Storage Temperature Range
Symbol
P
D
Value
1.5
20
10
-55 to +150
Unit
Watts
mW/℃
Amps
℃
I
FSM
T
J
, T
STG
Note 1: Mounted on Cu-Pad size 5mm x 5mm x 1.6mm on PCB
Version:I13
RATINGS AND CHARACTERISTIC CURVES (1SMA5926 THRU 1SMA5956)
FIG. 1 STEADY STATE POWER DERATING
4
PD, MAXIMUM POWER DISSIPATION(WATTS)
3.6
3.2
FIG. 2 Vz = 12 THRU 68 VOLTS
100
I
Z
, ZENER CURRENT (mA)
100
125
150
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0
25
50
75
T, TEMPERATURE(℃)
TA
TL
10
1
0.1
0
10
20
30
40
50
60
70
80
Vz, ZENER VOLTAGE (V)
FIG.3 ZENER VOLTAGE 12 TO 68 VOLTS
100
FIG. 4 EFFECT OF ZENER VOLTAGE
1000
Vz, TEMPERATURE COEFFICIENT
(mV/℃) @Izt
Zz, DYNAMIC IMPEDANCE (OHMS)
100
Iz(dc) = 1mA
10
10mA
Iz(ms) = Iz(dc)
20mA
10
10
100
1
10
Vz, ZENER VOLTAGE (V)
V
z
, ZENER VOLTAGE @IZT (V)
100
Version:I13
RATINGS AND CHARACTERISTIC CURVES (1SMA5926 THRU 1SMA5956)
FIG.5 CAPACITANCE CURVE
1000
TA=25℃
MEASURED@
ZERO BIAS
P
PK
, PEAK POWER (KW)
1
10
FIG. 6 TYPICAL PULSE RATING CURVE
C, CAPACITANCE(pF)
NONREPETITIVE, EXPONENTIAL
PULSE WAVEFORM, TA=25℃
100
MEASURED @
Vz/2
0.1
10
1
10
BREAKDOWN VOLTAGE (V)
100
0.01
0.01
0.1
1
10
Tp. PULSE WIDTH (ms)
FIG. 7 PULSE WAVEFORM
120
110
100
I
PPM
, PEAK PULSE CURRENT (%)
90
80
70
60
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
T, TIME(ms)
td
HALF VALUE - Ipp/2
10/1000 us WAVEFORM
AS DEFINED BY R.E.A.
≦10us
PEAK
VALUE
120
TA=25℃
PW(ID) IS DEFINED AS THE POINT
WHERE THE PEAK CURRENT
DECAYS TO 50% OF Ipp
110
100
I
PPM
, PEAK PULSE CURRENT (%)
90
80
70
60
50
40
30
20
10
0
0
T = 8us
0.1 IPEAK
0.01
0.02
FIG. 8 PULSE WAVEFORM
8/20 us WAVEFORM
AS DEFINED BY ANSI C62.1
AND IEC 801.5
0.9 IPEAK
0.5 IPEAK
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
T, TIME(ms)
Version:I13
stm32/stm8
京公网安备 11010802033920号
EEWORLD
