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D15XB20H

Description
Bridge Rectifier Diode, 1 Phase, 3.5A, 200V V(RRM), Silicon, 5S, SIP-4
CategoryDiscrete semiconductor    diode   
File Size186KB,6 Pages
ManufacturerSHINDENGEN
Websitehttps://www.shindengen.com
Download Datasheet Parametric View All

D15XB20H Overview

Bridge Rectifier Diode, 1 Phase, 3.5A, 200V V(RRM), Silicon, 5S, SIP-4

D15XB20H Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSHINDENGEN
package instructionR-PSFM-T4
Contacts4
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Minimum breakdown voltage200 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.05 V
JESD-30 codeR-PSFM-T4
JESD-609 codee0
Humidity sensitivity level2
Maximum non-repetitive peak forward current240 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current3.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse current10 µA
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE

D15XB20H Preview

SHINDENGEN
General Purpose Rectifiers
SIL Bridges
D15XB20H
200V 15A
FEATURES
Thin Single In-Line Package
High current capacity with Small Package
High IFSM
Superior Thermal Conductivity
APPLICATION
Switching power supply
Home Appliances, Office Equipment
Factory Automation, Inverter
OUTLINE DIMENSIONS
Case : 5S
Unit : mm
RATINGS
œAbsolute
Maximum Ratings (If not specified Tc=25Ž)
Item
Symbol
Tstg
Storage Temperature
Tj
Operating Junction Temperature
V
RM
Maximum Reverse Voltage
I
O
Average Rectified Forward Current
50Hz sine wave, R-load
Peak Surge Forward Current
Current Squared Time
Dielectric Strength
Mounting Torque
Conditions
I
FSM
I
2
t
Vdis
TOR
With heatsink
Tc=107Ž
50Hz sine wave, R-load Without heatsink Ta=25Ž
50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25Ž
1ms…tƒ10ms@Tj=25Ž
Terminals to case, AC 1 minute
iRecommended
torqueF0.5N¥mj
Ratings
-40`150
150
200
15
3.5
240
200
2.5
0.8
Ratings
Max.1.05
Max.10
Max.1.5
Max.5
Max.22
Unit
Ž
Ž
V
A
A
A
2
s
kV
N¥m
Unit
V
ÊA
Ž/W
œElectrical
Characteristics (If not specified Tc=25Ž)
Symbol
Conditions
Item
V
F
Forward Voltage
I
F
=7.5A, Pulse measurement, Rating of per diode
I
R
V
R
=V
RM
, Pulse measurement, Rating of per diode
Reverse Current
Æjc
junction to case
@@With
heatsink
Æjl
Thermal Resistance
junction to lead
@@
Without heatsink
Æja
junction to ambient Without heatsink
Copyright & Copy;2001 Shindengen Electric Mfg.Co.Ltd
D15XBxH
100
Forward Voltage
10
Forward Current I
F
[A]
1
Tc=150°C [TYP]
Tc=25°C [TYP]
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage V
F
[V]
D15XBxH
40
Forward Power Dissipation
SIN
35
Forward Power Dissipation P
F
[W]
30
25
20
15
10
5
0
0
5
10
15
20
Average Rectified Forward Current I
O
[A]
Tj = 150°C
Sine wave
D15XBxH
20
Derating Curve
Heatsink
Tc
Tc
Average Rectified Forward Current I
O
[A]
SIN
15
10
5
0
80
90
100
110
120
130
140
150
160
Case Temperature Tc [°C]
Sine wave
R-load
with heatsink
D15XBxH
5
Derating Curve
Average Rectified Forward Current I
O
[A]
4
SIN
PCB
Glass-epoxy substrate
Soldering land 5mmφ
3
2
1
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [°C]
Sine wave
R-load
Free in air

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