CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C304M3
Issued Date : 2007.04.23
Revised Date : 2013.08.07
Page No. : 1/7
BCX56M3
Features
•
High breakdown voltage, BV
CEO
≥
100V
•
Large continuous collector current capability
•
Low collector saturation voltage
•
Complementary to BCX53M3
•
Pb-free lead plating package
BV
CEO
I
C
V
CESAT
100V
1A
0.13V(typ.)
Symbol
BCX56M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Limits
100
100
5
1
2
0.6
1
2
(Note 1)
(Note 2)
Unit
V
V
V
A
A
W
W
W
Junction Temperature
Tj
Storage Temperature
Tstg
Note
:
1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
2 .
When mounted on ceramic with area measuring 40×40×1 mm
BCX56M3
150
-55~+150
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
*h
FE
3
f
T
Cob
Min.
100
100
5
-
-
-
-
80
100
40
150
-
Typ.
-
-
-
-
-
0.13
-
-
-
-
230
6
Max.
-
-
-
100
20
0.3
1
-
400
-
-
15
Unit
V
V
V
nA
nA
V
V
-
-
-
MHz
pF
Spec. No. : C304M3
Issued Date : 2007.04.23
Revised Date : 2013.08.07
Page No. : 2/7
Test Conditions
I
C
=100μA
I
C
=10mA
I
E
=10μA
V
CB
=80V
V
EB
=4V
I
C
=500mA, I
B
=50mA
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=5mA
V
CE
=2V, I
C
=150mA
V
CE
=2V, I
C
=500mA
V
CE
=10V, I
C
=50mA, f=100MHz
V
CB
=10V, I
E
=0A,f=1MHz
*Pulse Test: Pulse Width
≤380μs,
Duty Cycle≤2%
Classification Of h
FE
2
Rank
Range
16
100~250
25
160~400
Ordering Information
Device
BCX56M3
Package
SOT-89
(Pb-free lead plating package)
Shipping
1000 pcs / Tape & Reel
Marking
DF
BCX56M3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Current Gain vs Collector Current
1000
HFE
VCE=5V
Spec. No. : C304M3
Issued Date : 2007.04.23
Revised Date : 2013.08.07
Page No. : 3/7
Saturation Voltage vs Collector Current
1000
VCESAT
Saturation Voltage-(mV)
Current Gain---HFE
IC=25IB
100
VCE=2V
100
IC=20IB
VCE=1V
IC=10IB
10
1
10
100
Collector Current ---IC(mA)
1000
10
1
10
100
Collector Current ---IC(mA)
1000
Saturation Voltage vs Collector Current
10000
On Voltage vs Collector Current
10000
VBEON@VCE=2V
On Voltage-(mV)
VBESAT@IC=10IB
Saturation Voltage-(mV)
1000
1000
100
1
10
100
1000
10000
100
1
Collector Current--- IC(mA)
10
100
1000
Collector Current--- IC(mA)
10000
Transition Frequency vs Collector Current
1000
Transition Frequency---fT(MHz)
VCE=10V
f=1MHz
Capacitance Characteristics
100
f=1MHz
Capacitance---Cob(pF)
100
10
10
1
10
100
Collector Current---IC(mA)
1000
1
0.1
1
10
Collector Base Voltage-- VCB(V)
100
BCX56M3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Power Derating Curves
2.5
2
1.5
1
0.5
0
0
25
50
75
100 125 150
Ambient Temperature---TA(℃)
175
200
Spec. No. : C304M3
Issued Date : 2007.04.23
Revised Date : 2013.08.07
Page No. : 4/7
Power Dissipation---PD(W)
See Note 2 on page 1
See Note 1 on page 1
BCX56M3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C304M3
Issued Date : 2007.04.23
Revised Date : 2013.08.07
Page No. : 5/7
Carrier Tape Dimension
BCX56M3
CYStek Product Specification
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