BC846A - BC848C
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
SPICE MODEL: BC846A BC846B BC846C BC847A BC847B
BC847C BC848A BC848B BC848C
Features
·
·
·
·
Ideally Suited for Automatic Insertion
Complementary PNP Types Available (BC856-BC858)
For Switching and AF Amplifier Applications
Available in Lead Free/RoHS Compliant Version
(Note 3)
B
E
C
B
C
A
SOT-23
Dim
A
B
C
D
E
G
K
J
L
M
TOP VIEW
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: SOT-23
Case material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please See Ordering
Information, Note 6, on Page 4
Pin Connections: See Diagram
Marking Codes (See Table Below & Diagram
on Page 4)
Ordering & Date Code Information: See Page 4
Approx. Weight: 0.008 grams
E
D
G
H
H
J
K
L
C
M
a
All Dimensions in mm
B
E
Marking Code (Note 2)
Type
BC846A
BC846B
BC847A
BC847B
Marking
1A, K1Q
1B, K1R
1E, K1E, K1Q
1F, K1F, K1R
Type
BC847C
BC848A
BC848B
BC848C
Marking
1G, K1M
1J, K1J, K1E, K1Q
1K, K1K, K1F, K1R
1L, K1L, K1M
Maximum Ratings
Collector-Base Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
BC846
BC847
BC848
BC846
BC847
BC848
BC846, BC847
BC848
V
CBO
Value
80
50
30
65
45
30
6.0
5.0
100
200
200
300
417
-65 to +150
Unit
V
Characteristic
Collector-Emitter Voltage
V
CEO
V
EBO
I
C
I
CM
I
EM
P
d
R
qJA
T
j
, T
STG
V
V
mA
mA
mA
mW
°C/W
°C
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http:/ /www.diodes.com/datasheets/ap02001.pdf.
2. Current gain subgroup “C” is not available for BC846.
3. No purposefully added lead.
DS11108 Rev. 17 - 2
1 of 4
www.diodes.com
BC846A-BC848C
ã
Diodes Incorporated
Electrical Characteristics
Characteristic
@ T
A
= 25°C unless otherwise specified
Symbol
BC846
BC847 V
(BR)CBO
BC848
Min
80
50
30
65
45
30
6
5
—
—
—
—
—
—
—
—
—
—
—
—
110
200
420
—
—
580
—
—
—
—
—
—
100
—
—
Typ
—
—
—
—
—
—
—
220
330
600
2.7
4.5
8.7
18
30
60
1.5x10
-4
2x10
-4
3x10
-4
180
290
520
90
200
700
900
660
—
—
—
—
—
—
300
3.0
2
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
220
450
800
250
600
—
700
770
15
15
15
15
5.0
—
—
10
Unit
V
Test Condition
I
C
= 10mA, I
B
= 0
Collector-Base Breakdown Voltage (Note 4)
Collector-Emitter Breakdown Voltage (Note 4) BC846
BC847 V
(BR)CEO
BC848
Emitter-Base Breakdown Voltage
(Note 3)
H-Parameters
Small Signal Current Gain
BC846, BC847 V
(BR)EBO
BC848
h
fe
h
fe
h
fe
h
ie
h
ie
h
ie
h
oe
h
oe
h
oe
h
re
h
re
h
re
h
FE
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
BC846
BC847
BC848
I
CES
I
CES
I
CES
I
CBO
I
CBO
f
T
C
CBO
NF
V
V
—
—
—
kW
kW
kW
µS
µS
µS
—
—
—
—
mV
mV
mV
nA
nA
nA
nA
µA
MHz
pF
dB
I
C
= 10mA, I
B
= 0
I
E
= 1mA, I
C
= 0
Current Gain Group A
B
C
Input Impedance
Current Gain Group A
B
C
Output Admittance
Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
A
Current Gain Group
B
C
DC Current Gain
Current Gain Group A
B
(Note 4) C
V
CE
= 5.0V, I
C
= 2.0mA,
f = 1.0kHz
V
CE
= 5.0V, I
C
= 2.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
= 5.0V, I
C
= 10mA
V
CE
= 80V
V
CE
= 50V
V
CE
= 30V
V
CB
= 40V
V
CB
= 30V, T
A
= 150°C
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
V
CB
= 10V, f = 1.0MHz
V
CE
= 5V, I
C
= 200µA,
R
S
= 2.0kW,
f = 1.0kHz,
Df
= 200Hz
Collector-Emitter Saturation Voltage (Note 4)
Base-Emitter Saturation Voltage (Note 4)
Base-Emitter Voltage (Note 4)
Collector-Cutoff Current (Note 4)
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Notes:
4. Short duration pulse test used to minimize self-heating effect.
DS11108 Rev. 17 - 2
2 of 4
www.diodes.com
BC846A-BC848C
0.4
350
P
D
, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
0
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
V
CE(SAT)
, COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
I
C
I
B
= 20
0.3
0.2
T
A
= 150°C
0.1
T
A
= 25°C
T
A
= -50°C
0
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 2 Collector Emitter Saturation Voltage
vs. Collector Current
1000
1000
T
A
= 150°C
T
A
= 25°C
100
T
A
= -50°C
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
V
CE
= 5V
h
FE
, DC CURRENT GAIN
100
10
10
1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs. Collector Current
1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 4, Gain Bandwidth Product vs Collector Current
DS11108 Rev. 17 - 2
3 of 4
www.diodes.com
BC846A-BC848C
Ordering Information
Device
BC84xx-7*
Notes:
(Note 5)
Packaging
SOT-23
Shipping
3000/Tape & Reel
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
* xx = device type, e.g. BC846A-7.
6. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above.
Example: BC846A-7-F.
Marking Information
XXX
XXX = Product Type Marking Code (See Page 1), e.g. K1Q or 1A = BC846A
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
1999
K
Feb
2
2000
L
March
3
2001
M
Apr
4
2002
N
May
5
2003
P
Jun
6
2004
R
Jul
7
2005
S
Aug
8
2006
T
Sep
9
2007
U
Oct
O
2008
V
Nov
N
2009
W
Dec
D
DS11108 Rev. 17 - 2
YM
4 of 4
www.diodes.com
BC846A-BC848C
Microchip MCU
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