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SMCG51C-M3/9AT

Description
Trans Voltage Suppressor Diode
CategoryDiscrete semiconductor    diode   
File Size86KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

SMCG51C-M3/9AT Overview

Trans Voltage Suppressor Diode

SMCG51C-M3/9AT Parametric

Parameter NameAttribute value
MakerVishay
Reach Compliance Codeunknown
ECCN codeEAR99
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
SMCG5.0A thru SMCG188CA
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Supressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
DO-215AB (SMCG)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
PRIMARY CHARACTERISTICS
V
WM
P
PPM
P
D
I
FSM
T
J
max.
5.0 V to 188 V
1500 W
6.5 W
200 A
150 °C
TYPICAL APPLCIATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use C or CA suffix (e.g.
SMCG188CA).
Electrical characteristics apply in both directions.
Case:
DO-215AB (SMCG)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity:
For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
Peak pulse current with a 10/1000 μs waveform
Power dissipation on infinite heatsink T
A
= 50 °C
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal
SYMBOL
P
PPM (1)(2)
I
PPM (1)
P
D
I
FSM (2)
T
J
, T
STG
VALUE
1500
See next table
6.5
200
- 55 to + 150
UNIT
W
A
W
A
°C
Revision: 20-Dec-11
Document Number: 89428
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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