IC 512K X 8 FLASH 12V PROM, 100 ns, PDIP32, Programmable ROM
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Texas Instruments |
| package instruction | DIP, DIP32,.6 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Maximum access time | 100 ns |
| Other features | BULK ERASE; BLOCK ERASE; BYTE PROGRAMMABLE |
| command user interface | YES |
| Data polling | YES |
| Durability | 10000 Write/Erase Cycles |
| JESD-30 code | R-PDIP-T32 |
| length | 41.4 mm |
| memory density | 4194304 bit |
| Memory IC Type | FLASH |
| memory width | 8 |
| Number of functions | 1 |
| Number of departments/size | 16 |
| Number of terminals | 32 |
| word count | 524288 words |
| character code | 512000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 512KX8 |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP32,.6 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 5 V |
| Programming voltage | 12 V |
| Certification status | Not Qualified |
| Maximum seat height | 5.08 mm |
| Department size | 32K |
| Maximum standby current | 0.0001 A |
| Maximum slew rate | 0.04 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| switch bit | YES |
| type | NOR TYPE |
| width | 15.24 mm |
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