BSN20 datasheet, PDF - EEWORLD Datasheet

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BSN20: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size98KB，5 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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BSN20 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BSN20 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Vishay
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	0.18 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.35 W
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)

BSN20 Preview

BSN20

N-Channel Enhancement-Mode MOSFET

TO-236AB (SOT-23)

.122 (3.1)

.110 (2.8)

.016 (0.4)

.056 (1.43

)

.052 (1.33

)

odu

NC T

Top View

Pin Configuration

Gate

Source

Drain

50V

DS(ON)

6Ω

180mA

0.031 (0.8)

0.035 (0.9)

0.079 (2.0)

max. .004 (0.1)

0.037 (0.95)

.007 (0.175)

.005 (0.125)

.037(0.95) .037(0.95)

.045 (1.15)

.037 (0.95)

Mounting Pad Layout

.016 (0.4)

.102 (2.6)

.094 (2.4)

Dimensions in inches and (millimeters)

Mechanical Data

Case:

SOT-23 Plastic Package

Weight:

approx. 0.008g

Marking Code:

B20

Features

• Advanced Trench Process Technology

• High density cell design for ultra-low on-resistance

• High input impedance

• High-speed switching

• No minority carrier storage time

• CMOS logic compatible input

• No secondary breakdown

Maximum Ratings and Thermal Characteristics

Parameter

Drain-Source Voltage

Gate-Source-Voltage

Continuous Drain Current

(1)

Pulsed Drain Current

(2)

Power Dissipation

(1)

= 25°C

= 70°C

= 25°C

= 70°C

Symbol

, T

stg

θJA

= 25°C unless otherwise noted)

Limit

Unit

°C

°C/W

180

145

1300

350

225

–55 to +150

350

Operating Junction and Storage Temperature Range

Maximum Junction-to-Ambient Thermal Resistance

(1)

Notes:

(1) Surface Mounted on FR4 Board

(2) Pulse test, pulse width

≤

300µs, duty cycle

≤

4/11/01

BSN20

N-Channel Enhancement-Mode MOSFET

Electrical Characteristics

Parameter

Static

Drain-Source Breakdown Voltage

= 25°C unless otherwise noted)

Symbol

Test Condition

Min

Typ

Max

Unit

DSS

= 0V, I

= 10µA

= V

, I

= 1mA

0.4

0.3

—

1.7

—

2.5

250

—

1.8

Gate Threshold Voltage

GS(th)

, I

=1mA,T

=150°C

= V

, I

= 250µA

Gate-Body Leakage

Zero Gate Voltage Drain Current

GSS

DSS

= 0V, V

= ± 20V

= 40V, V

= 0V

=40V, V

=0V, T

=150°C

= 10V, I

= 100mA

100

1.0

—

µA

Drain-Source On-State Resistance

(1)

DS(on)

= 10V, I

= 100mA,

= 150°C

= 5V, I

= 100mA

Ω

Forward Transconductance

(1)

Dynamic

Turn-On Time

Turn-Off Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Source-Drain Diode

Diode Forward Voltage

(1)

Note:

(1) Pulse test; pulse width

≤

300

µs,

duty cycle

≤

= 10V, I

= 100mA

off

iss

oss

rss

=20V,V

=10V,R

=180Ω

=50Ω, R

=50Ω

= 0V

= 10V

f = 1.0MH

—

4.2

7.0

3.3

8.0

= 180mA, V

= 0V

—

0.85

1.5

off

90%

Switching

Test Circuit

GEN

OUT

Switching

Waveforms

d(on)

d(off)

90 %

10%

INVERTED

90%

Output, V

OUT

DUT

10%

50%

Input, V

10%

PULSE WIDTH

BSN20

N-Channel Enhancement-Mode MOSFET

Ratings and

Characteristic Curves

Fig. 1 – Output Characteristics

1.5

= 10V 7.0V

1.2

1.5

= 10V

Fig. 2 – Transfer Characteristics

55°C

25°C

= 125°C

-- Drain Current (A)

6.0V

0.9

5.0V

4.5V

0.6

4.0V

0.3

3.5V

3.0V

-- Drain Current (A)

0.5

-- Drain-to-Source Voltage (V)

-- Gate-to-Source Voltage (V)

Fig. 3 – Capacitance

f = 1 MHz

= 0V

iss

3.5

Fig. 4 – On-Resistance

vs. Drain Current

DS(ON)

-- On-Resistance (Ω)

C -- Capacitance (pF)

2.5

= 5V

1.5

= 10V

0.5

oss

rss

0.3

0.6

0.9

1.2

1.5

Drain-to-Source Voltage (V)

-- Drain Current (A)

Fig. 5 – Gate Charge

-- Gate-to-Source Voltage (V)

= 25V

= 180mA

0.2

0.4

0.6

0.8

1.0

1.2

-- Gate Charge (nC)

BSN20

N-Channel Enhancement-Mode MOSFET

Ratings and

Characteristic Curves

Fig. 6 – On-Resistance

vs. Gate-to-Source Voltage

3.5

= 180mA

3.0

2.5

= 125°C

2.0

1.5

1.0

0.5

--55°C

0.01

0.2

0.4

0.6

0.8

1.2

1.4

25°C

= 0V

Fig. 7 – Source-Drain Diode

Forward Voltage

DS(ON)

-- On-Resistance (Ω)

-- Source Current (A)

= 125°C

25°C

0.1

-- Gate-to-Source Voltage (V)

-- Source-to-Drain Voltage (V)

Fig. 8 – Breakdown Voltage vs.

Junction Temperature

= 10µA

1.8

Fig. 9 – Threshold Voltage vs.

Junction Temperature

= 250µA

DSS

-- Breakdown Voltage (V)

--50

GS(th)

-- Gate-to-Source

Threshold Voltage (V)

150

1.6

1.4

1.2

0.8

--50

--25

100

125

--25

100

125

150

-- Junction Temperature (°C)

BSN20

N-Channel Enhancement-Mode MOSFET

Ratings and

Characteristic Curves

Fig. 10 – On-Resistance vs.

Junction Temperature

2.0

Fig. 11 – Thermal Impedance

D = 0.5

DS(ON)

On-Resistance (Normalized)

1.6

1.4

1.2

1.0

0.8

0.6

0.4

--50

ΘJA

(norm)

-- Normalized Thermal

Impedance

1.8

= 10V

= 180mA

0.2

0.1

0.05

0.02

0.01

Single Pulse

0.01

0.0001 0.001

0.01

1. Duty Cycle, D = t

2. R

θJA

(t) = R

θJA(norm)

θJA

3. R

θJA

= 350°C/W

4. T

- T

= P

* R

θJA

(t)

0.1

100

--25

100

125

150

-- Junction Temperature (°C)

Pulse Duration (sec.)

Fig. 12 – Power vs. Pulse Duration

4.0

Single Pulse

θJA

= 350°C/W

= 25°C

Fig. 13 – Maximum Safe Operating Area

3.2

-- Drain Current (A)

Power (W)

2.4

0.1

)

Lim

10s

1.6

0.01

= 10V

Single Pulse

= 25°C

0.001

0.8

0.001

0.01

0.1

100

0.1

100

Pulse Duration (sec.)

-- Drain-Source Voltage (V)

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