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PHP125-TAPE-7

Description
TRANSISTOR 2.3 A, 30 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SO-8, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size69KB,3 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

PHP125-TAPE-7 Overview

TRANSISTOR 2.3 A, 30 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SO-8, FET General Purpose Power

PHP125-TAPE-7 Parametric

Parameter NameAttribute value
MakerNXP
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)2.3 A
Maximum drain-source on-resistance0.25 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Maximum power consumption environment2 W
Maximum pulsed drain current (IDM)10 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)140 ns
Maximum opening time (tons)80 ns
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